ZXMN4A06G Zetex Semiconductors, ZXMN4A06G Datasheet - Page 3
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ZXMN4A06G
Manufacturer Part Number
ZXMN4A06G
Description
N-CHANNEL ENHANCEMENT MODE MOSFET
Manufacturer
Zetex Semiconductors
Datasheet
1.ZXMN4A06G.pdf
(7 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
ISSUE 1 - MAY 2002
100m
10m
70
60
50
40
30
20
10
10
100µ 1m 10m 100m 1
0
1
Transient Thermal Impedance
R
Limited
Single Pulse
T
V
T
D= 0.5
D= 0.2
DS(on)
amb
amb
DS
DC
= 25° C
Safe Operating Area
= 25° C
Drain-Source Voltage (V)
1s
Pulse Width (s)
1
100ms
10ms
1ms
D= 0.1
D= 0.05
10
100µs
10
Single Pulse
CHARACTERISTICS
100
1k
3
100
2.0
1.6
1.2
0.8
0.4
0.0
10
100µ 1m 10m 100m 1
1
0
20
Pulse Power Dissipation
Temperature (° C)
Derating Curve
40
Pulse Width (s)
60
ZXMN4A06G
80 100 120 140 160
Single Pulse
T
10
amb
= 25° C
100
1k