ZXMN3A06DN8 Zetex Semiconductors, ZXMN3A06DN8 Datasheet - Page 2

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ZXMN3A06DN8

Manufacturer Part Number
ZXMN3A06DN8
Description
DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
Manufacturer
Zetex Semiconductors
Datasheet

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ZXMN3A06DN8
ABSOLUTE MAXIMUM RATINGS.
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10µs - pulse width limited by maximum
junction temperature. Refer to Transcient Thermal Inpedance graph.
(d) For device with one active die
(e) For device with two active die running at equal power.
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current (V
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode)(c)
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Operating and Storage Temperature Range
PARAMETER
Junction to Ambient (a)(d)
Junction to Ambient (a)(e)
Junction to Ambient (b)(d)
A
A
A
=25°C (a)(d)
=25°C (a)(e)
=25°C (b)(d)
(V
(V
GS
GS
GS
=10V; T
=10V; T
=10V; T
A
A
A
=25°C)(b)(d)
=70°C)(b)(d)
=25°C)(a)(d)
2
SYMBOL
V
V
I
I
I
I
P
P
P
T
D
DM
S
S M
SYMBOL
R
R
R
D
D
D
j
D SS
G S
:T
JA
JA
JA
stg
PROVISIONAL ISSUE B - JULY 2001
-55 to +150
VALUE
LIMIT
1.75
62.5
6.7
5.3
5.6
3.9
2.5
30
25
25
14
16
20
71
50
2
mW/°C
mW/°C
mW/°C
UNIT
UNIT
°C/W
°C/W
°C/W
W
W
W
°C
A
A
A
A
V
V

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