ZXMN3A01E6 Zetex Semiconductors, ZXMN3A01E6 Datasheet - Page 2

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ZXMN3A01E6

Manufacturer Part Number
ZXMN3A01E6
Description
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Manufacturer
Zetex Semiconductors
Datasheet

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ABSOLUTE MAXIMUM RATINGS.
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10 s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
ZXMN3A01E6
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current V GS =10V; T A =25°C (b)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode) (c)
Power Dissipation at T A =25°C (a)
Linear Derating Factor
Power Dissipation at T A =25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
V GS =10V; T A =70°C (b)
V GS =10V; T A =25°C (a)
SYMBOL
V DSS
V GS
I D
I DM
I S
I SM
P D
P D
T j :T stg
SYMBOL
R JA
R JA
2
-55 to +150
VALUE
LIMIT
13.6
113
3.0
2.4
2.4
2.4
1.1
8.8
1.7
70
30
10
10
20
ISSUE 1 - MARCH 2002
mW/°C
mW/°C
UNIT
°C/W
°C/W
UNIT
°C
W
W
V
V
A
A
A
A

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