ZXMN2A02N8 Zetex Semiconductors, ZXMN2A02N8 Datasheet - Page 4

• Manufacturer Part Number: ZXMN2A02N8
• Description: N-CHANNEL ENHANCEMENT MODE MOSFET
• Manufacturer: Zetex Semiconductors

ELECTRICAL CHARACTERISTICS (at T
NOTES
(1) Measured under pulsed conditions. Width
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMN2A02N8
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance
Forward Transconductance
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
S E M I C O N D U C T O R S
(3)
(1)
(2) (3)
PARAMETER
(1)
(3)
(3)
(1)(3)
300μs. Duty cycle
V (BR)DSS
I DSS
I GSS
V GS(th)
R DS(on)
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
V SD
t rr
Q rr
SYMBOL
amb
= 25°C unless otherwise stated).
2% .
4
MIN.
0.7
20
1900
TYP.
33.3
13.6
18.9
0.85
16.3
356
218
7.9
5.2
4.9
7.8
27
10
MAX. UNIT
0.02
0.04
0.95
100
1
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
ISSUE 6 - FEBRUARY 2007
I D =250μA, V GS =0V
V DS =20V, V GS =0V
I
V GS =4.5V, I D =11A
V GS =2.5V, I D =8.4A
V DS =10V,I D =11A
V DS =10V, V GS =0V,
f=1MHz
V DD =10V, I D =1A
R G ≅6.0Ω, V GS =4.5V
V DS =10V,V GS =4.5V,
I D =11A
T J =25°C, I S =11.5A,
V GS =0V
T J =25°C, I F =2.1A,
di/dt= 100A/μs
V GS = 12V, V DS =0V
D
=250 A, V DS = V GS
CONDITIONS.