ZXMC3AM832 Zetex Semiconductors, ZXMC3AM832 Datasheet

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ZXMC3AM832

Manufacturer Part Number
ZXMC3AM832
Description
MPPS Miniature Package Power Solutions COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
Manufacturer
Zetex Semiconductors
Datasheet
MPPS™ Miniature Package Power Solutions
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
SUMMARY
N-Channel V
P-Channel V
DESCRIPTION
Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package)
outline this dual 30V N channel Trench MOSFET utilizes a unique structure
combining the benefits of Low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage power management
applications. Users will also gain several other key benefits:
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
C01
PROVISIONAL ISSUE E - JULY 2004
DEVICE
ZXMC3AM832TA
ZXMC3AM832TC
Low on - resistance
Fast switching speed
Low threshold
Low gate drive
3mm x 2mm MLP
MOSFET gate drive
LCD backlight inverters
Motor control
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Reduced component count
(BR)DSS
(BR)DSS
= -30V; R
= 30V; R
REEL
13’‘
7
’‘
WIDTH
TAPE
8mm
8mm
DS(ON)
DS(ON)
= 0.12 ; I
= 0.21 ; I
10000 units
QUANTITY
3000 units
PER REEL
D
D
= 3.7A
= -2.7A
1
PINOUT
ZXMC3AM832
G2
D2
3mm x 2mm Dual Die MLP
underside view
4
5
3 x 2 Dual MLP
D2
S2
6
3
D1
7
2
G1
D1
8
1
S1

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ZXMC3AM832 Summary of contents

Page 1

... ZXMC3AM832TC 13’‘ 8mm DEVICE MARKING C01 PROVISIONAL ISSUE E - JULY 2004 = -2.7A D QUANTITY PER REEL 3000 units 10000 units 1 ZXMC3AM832 3mm x 2mm Dual Die MLP PINOUT Dual MLP ...

Page 2

... ZXMC3AM832 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current@V =10V =10V =10V Pulsed Drain Current Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) (a)(f) Power Dissipation at TA=25°C Linear Derating Factor (b)(f) Power Dissipation at TA=25°C Linear Derating Factor (c)(f) Power Dissipation at TA=25° ...

Page 3

... Note (f) Note ( 100 0.1 Thermal Resistance v Board Area 3 ZXMC3AM832 10ms 1ms 100us =25°C amb 1 10 2oz Cu Note (e)(g) 2oz Cu Note (a)(f) 1oz Cu Note (d)( 100 125 150 Temperature (°C) Derating Curve ...

Page 4

... ZXMC3AM832 N-CHANNEL ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1)(3) Forward Transconductance (3) DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance (2) (3) SWITCHING Turn-On Delay Time Rise Time ...

Page 5

... C 39.8 oss C 25.8 rss t 1.5 d(on 11.3 d(off -0.85 - ZXMC3AM832 UNIT CONDITIONS V I =-250µ =-30V 20V =-250 Ω V =-10V, I =-1. Ω V =-4.5V, I =-1. =-15V,I =-1 ...

Page 6

... ZXMC3AM832 N-CHANNEL TYPICAL CHARACTERISTICS 10V T = 25° 0.1 0 Drain-Source Voltage (V) DS Output Characteristics 10V 150° 25°C 0.1 2.0 2.5 3.0 3.5 V Gate-Source Voltage (V) GS Typical Transfer Characteristics 3.5V 3V 2. 25°C 0 Drain Current (A) D On-Resistance v Drain Current 150° ...

Page 7

... N-CHANNEL TYPICAL CHARACTERISTICS 300 250 200 C ISS 150 100 Drain - Source Voltage (V) DS Capacitance v Drain-Source Voltage PROVISIONAL ISSUE E - JULY 2004 2. 1MHz OSS 4 C RSS Gate-Source Voltage v Gate Charge 7 ZXMC3AM832 V = 15V Charge (nC) ...

Page 8

... ZXMC3AM832 P-CHANNEL TYPICAL CHARACTERISTICS 10V T = 25° 0.1 0.01 0 Drain-Source Voltage (V) DS Output Characteristics T = 150° 25°C 0 Gate-Source Voltage (V) GS Typical Transfer Characteristics 2V 100 - 0.1 0 Drain Current (A) D On-Resistance v Drain Current T = 150° 3. 2. ...

Page 9

... P-CHANNEL TYPICAL CHARACTERISTICS 300 250 200 C ISS 150 C OSS 100 Drain - Source Voltage (V) DS Capacitance v Drain-Source Voltage PROVISIONAL ISSUE E - JULY 2004 -1. 1MHz RSS Gate-Source Voltage v Gate Charge 9 ZXMC3AM832 V = -15V Charge (nC) ...

Page 10

... ZXMC3AM832 MLP832 PACKAGE OUTLINE (3mm x 2mm Micro Leaded Package) CONTROLLING DIMENSIONS IN MILLIMETERS APPROX. CONVERTED DIMENSIONS IN INCHES PACKAGE DIMENSIONS Millimeters DIM Min Max Min A 0.80 1.00 0.0315 A1 0.00 0.05 0.00 A2 0.65 0.75 0.0256 A3 0.15 0.25 0.006 b 0.24 0.34 0.0095 b1 0.17 0.30 0.0068 D 3.00 BSC D2 0.82 1.02 0.0323 D3 1.01 1.21 0.0398 © Zetex Semiconductors plc 2004 Europe Americas Zetex GmbH Zetex Inc Streitfeldstraß ...

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