ZXMC3A16DN8 Zetex Semiconductors, ZXMC3A16DN8 Datasheet - Page 5

• Manufacturer Part Number: ZXMC3A16DN8
• Description: COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
• Manufacturer: Zetex Semiconductors

P-CHANNEL
ELECTRICAL CHARACTERISTICS (at T
NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE F - JULY 2004
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance
Forward Transconductance
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
(3)
(1)
(2) (3)
(1)
(3)
(3)
(1)(3)
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
amb
DSS
GSS
d(on)
r
d(off)
f
rr
(BR)DSS
GS(th)
DS(on)
fs
iss
oss
rss
SD
g
g
gs
gd
rr
= 25°C unless otherwise stated)
5
MIN.
-30
1.0
-0.85
TYP.
12.9
24.9
2.67
3.86
21.2
18.7
970
166
116
9.2
3.8
6.1
35
19
MAX.
0.048
0.070
-0.95
-1.0
100
ZXMC3A16DN8
UNIT CONDITIONS
nA
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
I
V
I
V
V
V
V
f=1MHz
V
R
V
I
V
I
T
V
T
di/dt= 100A/µs
D
V
D
D
D
DS
GS
GS
DS
DS
DD
G
DS
DS
J
GS
J
=-250µA, V
=-250 A, V
=-4.2A
=-4.2A
GS
=25°C, I
=25°C, I
=6.0Ω, V
=-30V, V
=-15V,I
=-15 V, V
=-15V,V
=-15V,V
=-10V, I
=-4.5V, I
=0V
= 20V, V
=-15V, I
S
F
D
=-2A,
GS
=-3.6A,
D
GS
GS
=-4.2A
D
GS
D
GS
=-4.2A
GS
DS
=-1A
=-3.4A
=-10V
DS
=-5V,
=-10V,
=0V
=0V
= V
=0V,
=0V
GS