ZXM66P02N8 Zetex Semiconductors, ZXM66P02N8 Datasheet - Page 3

• Manufacturer Part Number: ZXM66P02N8
• Description: 20V P-CHANNEL ENHANCEMENT MODE MOSFET
• Manufacturer: Zetex Semiconductors

PROVISIONAL ISSUE A - MAY 2001
ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
(1)
Forward Transconductance (1)(3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge(3)
SYMBOL MIN.
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
gs
gd
rr
3
-20
-0.7
amb
= 25°C unless otherwise stated).
TYP.
118.4
2068
1038
13.3
14.0
44.3
98.4
43.3
21.3
23.1
12.2
506
3.5
MAX.
-1
-100
0.025
0.045
-
-
-
0.95
ZXM66P02N8
UNI
T
V
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
A
CONDITIONS.
I
V
I
V
V
V
V
f=1MHz
V
R
V
I
T
V
T
di/dt= 100A/ s
D
V
D
D
DS
GS
GS
DS
DS
DD
G
DS
j
GS
j
=-250 A, V
=-250 A, V
=-3.2A
=25°C, I
=25°C, I
GS
=6.0 , V
=-16V, V
=-4.5V, I
=-2.5V, I
=-10V,I
=-15 V, V
=-10V,V
=0V
=-10V, I
= 12V, V
S
F
=-3.2A,
D
=-3.2A,
GS
GS
=-3.2A
D
GS
D
D
GS
GS
DS
=-3.2A
=-3.2A
=-2.7A
DS
=-5V
=-4.5V
=0V
= V
=0V,
=0V
=0V
GS