ZXM64N03X Zetex Semiconductors, ZXM64N03X Datasheet

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ZXM64N03X

Manufacturer Part Number
ZXM64N03X
Description
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Manufacturer
Zetex Semiconductors
Datasheet
30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
PROVISIONAL ISSUE A - JULY 1999
DEVICE
ZXM64N03XTA
ZXM64N03XTC
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
ZXM4N03
=30V; R
REEL SIZE
(inches)
DS(ON)
13
7
=0.045
TAPE WIDTH (mm)
12mm embossed
12mm embossed
I
D
=5.0A
129
QUANTITY
PER REEL
1000 units
4000 units
G
S
S
S
ZXM64N03X
MSOP8
Top View
D
D
D
D

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ZXM64N03X Summary of contents

Page 1

... Disconnect switches Motor control ORDERING INFORMATION DEVICE REEL SIZE (inches) ZXM64N03XTA 7 ZXM64N03XTC 13 DEVICE MARKING ZXM4N03 PROVISIONAL ISSUE A - JULY 1999 I =5.0A D TAPE WIDTH (mm) QUANTITY PER REEL 12mm embossed 1000 units 12mm embossed 4000 units 129 ZXM64N03X MSOP8 Top View ...

Page 2

... ZXM64N03X ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate- Source Voltage Continuous Drain Current (V =10V =10V Pulsed Drain Current (c) Continuous Source Current (Body Diode)(b) Pulsed Source Current (Body Diode)(c) Power Dissipation at T =25°C (a) A Linear Derating Factor Power Dissipation at T =25°C (b) ...

Page 3

... PROVISIONAL ISSUE A - JULY 1999 CHARACTERISTICS 2.0 1.5 1.0 0 100 0 120 90 60 D=0.5 30 D=0.2 D=0.1 Single Pulse 100 0.0001 Transient Thermal Impedance 131 ZXM64N03X Refer Note (b) Refer Note ( 100 120 140 160 T - Temperature (°C) Derating Curve 0.001 0.01 0 100 1000 Pulse Width (s) Refer Note (a) ...

Page 4

... ZXM64N03X ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time ...

Page 5

... Normalised R 100 10 1 100m 10 100 0.3 Source-Drain Diode Forward Voltage 133 ZXM64N03X VGS 10V 6V 5V 4.5V 4V 3. 100 V - Drain-Source Voltage (V) DS Output Characteristics RDS(on) VGS=10V ID=3.7A VGS=VDS ID=250uA VGS(th) 0 100 200 T - Junction Temperature (°C) j and V DS(on) GS(th) v Temperature T=150°C T=25° ...

Page 6

... ZXM64N03X 1600 1400 1200 1000 800 600 400 200 0 0 Drain Source Voltage (V) DS Capacitance v Drain-Source Voltage Basic Gate Charge Waveform Switching Time Waveforms PROVISIONAL ISSUE A - JULY 1999 TYPICAL CHARACTERISTICS 14 Vgs=0V ID=3.7A f=1Mhz 12 Ciss Coss Crss 100 0 Gate-Source Voltage v Gate Charge ...

Page 7

... ZXM64N03X PACKAGE DIMENSIONS Conforms to JEDEC MO-187 Iss A PAD LAYOUT DETAILS Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Zetex Inc ...

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