AAT2856INJ-EE-T1 Advanced Analog Technology, Inc., AAT2856INJ-EE-T1 Datasheet - Page 4
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AAT2856INJ-EE-T1
Manufacturer Part Number
AAT2856INJ-EE-T1
Description
High Current Charge Pump with Dual LDO for Backlight Applications
Manufacturer
Advanced Analog Technology, Inc.
Datasheet
1.AAT2856INJ-EE-T1.pdf
(18 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AAT2856INJ-EE-T1
Manufacturer:
KEC
Quantity:
4 411
Electrical Characteristics
V
T
1. The AAT2856 is guaranteed to meet performance specifications over the -40°C to +85°C operating temperature range and is assured by design, characterization, and correla-
2. Current matching is defined as the deviation of any sink current from the average of all active channels.
4
4
ChargePump
ChargePump
A
Charge Pump Section
BL1-BL6 Backlight LED Outputs
ENS Logic Control
Linear Regulators
t
t
IN
Symbol
t
t
ENS(HI_MAX)
V
I
V
ENS(HI_MIN)
tion with statistical process controls.
I
V
ENS(HI_MIN)
ENS(HI_MAX)
V
t
I
I
OUTA(MAX)
PSRR
= 25°C.
T
t
t
t
V
OUTB(MAX)
PSRR
V
FBA
V
V
ENS(LOW)
OUTA(DO)
V
IN(SHDN)
BL_(MAX)
ΔI
ENS(OFF)
ENS(LAT)
OUTB(DO)
EN _ (DLY)
= 3.6V; C
I
IN(TH_H)
SD(HYS)
BL_(TH)
I
f
I
T
ENS(L)
ENS(H)
EN _ (H)
V
IN(Q)
EN _ (L)
I
OSC
OUT
ENS
(BL_)
, V
SD
IN
IN
FBB
A
B
,
,
,
,
,
Description
IN Operating Voltage Range
IN Operating Current
IN Shutdown Current
Over-Temperature Shutdown Threshold
Over-Temperature Shutdown Hysteresis
OUT Maximum Output Current
Charge Pump Mode Hysteresis
Charge Pump Oscillator Frequency
BL1-BL6 Maximum Current
BL1-BL6 Current Matching
BL1-BL6 Charge Pump Mode Transition Threshold
ENS Input Low Threshold
ENS Input High Threshold
ENS Input Leakage Current
ENS Serial Interface Low Time
ENS Serial Interface Minimum High Time
ENS Serial Interface Maximum High Time
ENS Off Timeout
ENS Serial Interface Latch Timeout
Output Voltage Tolerance
Ground Pin Current
OUTA, OUTB Maximum Load Current
OUTA, OUTB Dropout Voltage
OUTA, OUTB Power Supply Rejection Ratio
ENA, ENB Voltage Low Threshold
ENA, ENB Voltage High Threshold
ENA, ENB Enable Delay
IN
= 4.7μF; C
TM
TM
High Current Charge Pump with Dual LDO for Backlight Applications
High Current Charge Pump with Dual LDO for Backlight Applications
OUT
= 2.2μF; C
2
1
1
= C
2
w w w . a n a l o g i c t e c h . c o m
w w w . a n a l o g i c t e c h . c o m
= 1μF; T
A
= -40°C to +85°C, unless otherwise noted. Typical values are
Conditions
1X Mode, 3.0V ≤ V
No Load; ENL = AGND, ENS = IN
1.5X Mode, 3.0V ≤ V
No Load; ENL = AGND, ENS = IN
2X Mode, 3.0V ≤ V
No Load; ENL = AGND, ENS = IN
ENA = ENB = ENS = AGND
Address 0, Data 1
T
Address 0, Data 1; V
Address 12, Data 2; V
Address 0, Data 1; V
V
V
V
I
ENA = ENB = IN, ENS = AGND
ENA = IN, ENB = AGND or ENA =
AGND, ENB = IN, ENS = AGND
I
I
REF = Open
OUT
OUT
OUT
A
ENS
IN
IN
= 25°C
≥ 3.3V
≥ 3.3V
= 1mA to 200mA
= 150mA
= 10mA, C
= V
IN
= 5V
REF
= 10nF, 1kHz
IN
IN
≤ 5.5V, Active,
IN
≤ 5.5V, Active,
IN
IN
IN
≤ 5.5V, Active,
- V
- V
- V
F
F
F
= 1.5V
= 1.5V
PRODUCT DATASHEET
PRODUCT DATASHEET
= 1.5V
AAT2856
AAT2856
Min
1.17
-1.0
200
2.7
1.4
0.3
1.4
18
Typ
0.63
140
200
500
150
125
150
1.4
2.6
1.2
15
20
30
50
90
50
15
2
2856.2008.02.1.3
2856.2008.02.1.3
Max
1.23
500
500
200
150
300
5.5
1.0
1.0
0.4
1.0
0.4
22
75
75
1
4
5
Units
MHz
mA
mA
mV
mA
mV
mA
mV
μA
μA
μA
dB
°C
°C
μs
ns
μs
μs
μs
μs
%
V
V
V
V
V
V