BAP51L Philips Semiconductors (Acquired by NXP), BAP51L Datasheet - Page 3

• Manufacturer Part Number: BAP51L
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
9397 750 14554
Product data sheet
Fig 1. Forward resistance as a function of forward
( )
r
10
D
10
10
1
2
1
10
f = 100 MHz; T
current; typical values
1
j
= 25 C
1
Table 6:
T
Symbol
L
j
L
s
s
s
s
S
= 25 C unless otherwise specified.
21
21
21
21
2
2
2
2
Parameter
insertion loss
insertion loss
insertion loss
insertion loss
charge carrier life time
series inductance
10
Electrical characteristics
I
F
(mA)
001aac397
10
Rev. 01 — 11 March 2005
2
Conditions
I
I
I
I
when switched from
I
R
measured at I
I
Fig 2. Diode capacitance as a function of reverse
F
F
F
F
F
F
…continued
L
= 0.5 mA; see
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
= 1 mA; see
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
= 10 mA; see
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
= 100 mA; see
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
= 10 mA to I
= 100 mA; f = 100 MHz
= 100 ;
(fF)
C
400
300
200
100
d
0
f = 1 MHz; T
voltage; typical values
0
R
R
Figure 3
= 3 mA
Figure 3
= 6 mA;
Figure 3
Figure 3
5
j
= 25 C
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
10
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
0.4
0.39
0.4
0.26
0.26
0.27
0.11
0.11
0.12
0.07
0.07
0.09
0.55
0.6
15
Silicon PIN diode
BAP51L
V
001aac396
R
(V)
Max
-
-
-
-
-
-
-
-
-
-
-
-
-
-
20
Unit
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
nH
s
3 of 8