BU100 Inchange Semiconductor, BU100 Datasheet - Page 2
BU100
Manufacturer Part Number
BU100
Description
Silicon NPN Power Transistors
Manufacturer
Inchange Semiconductor
Datasheet
1.BU100.pdf
(3 pages)
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www.DataSheet.co.kr
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
V
V
V
V
CEO(SUS)
(BR)CBO
(BR)EBO
CE
BE
I
I
h
CBO
EBO
f
FE
T
(sat)
(sat)
Collector-emitter sustaining voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
PARAMETER
I
I
I
I
I
V
V
I
I
C
C
E
C
C
C
C
=1mA; I
CB
EB
=100mA ; I
=1mA; I
=8A ;I
=8A ;I
=2A ; V
=0.5A ; V
=120V; I
=7V; I
B
B
2
=2.5A
=2.5A
CE
C
C
E
CONDITIONS
=0
=0
=0
CE
=2V
E
B
=0
=10V;f=1MHz
=0
Product Specification
MIN
150
0.1
60
40
7
TYP.
MAX
BU100
3.3
2.2
10
10
90
UNIT
MHz
μA
μA
V
V
V
V
V
Datasheet pdf - http://www.DataSheet4U.net/