SI1032R Vishay Siliconix, SI1032R Datasheet - Page 3

• Manufacturer Part Number: SI1032R
• Description: N-Channel 20-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

Document Number: 71172
S-40574—Rev. C, 29-Mar-04
TYPICAL CHARACTERISTICS (T
1000
50
40
30
20
10
100
10
0
5
4
3
2
1
0
1
0
0.0
0.0
V
I
T
D
DS
J
= 150 mA
Source-Drain Diode Forward Voltage
0.2
On-Resistance vs. Drain Current
= 25_C
= 10 V
50
V
0.2
SD
Q
T
0.4
g
J
I
− Source-to-Drain Voltage (V)
D
= 125_C
− Total Gate Charge (nC)
− Drain Current (mA)
100
Gate Charge
0.6
V
GS
0.4
= 1.8 V
T
0.8
150
J
= 50_C
1.0
0.6
200
V
V
GS
GS
A
1.2
= 2.5 V
= 4.5 V
= 25_C UNLESS NOTED)
250
0.8
1.4
1.60
1.40
1.20
1.00
0.80
0.60
100
I
50
40
30
20
10
80
60
40
20
D
−50
0
0
= 175 mA
0
0
C
On-Resistance vs. Gate-to-Source Voltage
rss
On-Resistance vs. Junction Temperature
−25
V
f = 1 MHz
1
GS
4
T
= 0 V
V
V
C
J
GS
DS
0
− Junction Temperature (_C)
oss
I
− Gate-to-Source Voltage (V)
2
− Drain-to-Source Voltage (V)
D
= 200 mA
Capacitance
25
8
V
I
C
D
GS
Vishay Siliconix
iss
= 200 mA
3
= 4.5 V
50
12
Si1032R/X
4
75
V
I
D
GS
= 175 mA
16
www.vishay.com
100
= 1.8 V
5
125
20
6
3