SI1031R Vishay Siliconix, SI1031R Datasheet - Page 2

• Manufacturer Part Number: SI1031R
• Description: P-Channel 20-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

Si1031R/X
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate Body Leakage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
TYPICAL CHARACTERISTICS (T
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
V
GS
0.5
0.4
0.3
0.2
0.1
0.0
= 5 thru 2.5 V
0
b
Parameter
1
V
a
a
DS
Output Characteristics
a
- Drain-to-Source Voltage (V)
2
A
a
a
= 25_C UNLESS OTHERWISE NOTED)
3
4
Symbol
V
r
r
I
DS(
DS(on)
t
t
I
I
I
I
V
GS(th)
D(on)
Q
Q
d(on)
d(off)
GSS
GSS
DSS
DSS
g
Q
SD
t
t
A
gd
fs
gs
r
f
g
5
)
= 25_C UNLESS NOTED)
1.8 V
2 V
6
V
I
D
New Product
DS
^ -150 mA, V
V
= -10 V, V
DS
V
V
V
V
V
= -16 V, V
V
GS
GS
GS
V
I
DS
GS
V
V
V
S
V
V
DS
DS
DD
DD
DS
Test Condition
DS
DS
= -150 mA, V
= -4.5 V, I
= -2.5 V, I
= -1.8 V, I
= -10 V, I
= -1.5 V, I
= -5 V, V
= V
= -16 V, V
= -10 V, R
= -10 V, R
= 0 V, V
= 0 V, V
GS
GS
GEN
GS
= -4.5 V, I
, I
D
D
D
D
= -4.5 V, R
= 0 V, T
GS
GS
GS
D
D
= -250 mA
= -125 m A
= -100 m A
= -150 mA
GS
= -150 mA
= -30 m A
L
L
GS
= "2.8 V
= "4.5 V
= -4.5 V
= 65 W
= 65 W
= 0 V
= 0 V
D
500
400
300
200
100
J
= -150 mA
= 85_C
0
0.0
G
= 10 W
0.5
V
GS
Transfer Characteristics
Min
-0.40
-200
- Gate-to-Source Voltage (V)
1.0
Typ
1.5
"0.5
1500
150
450
"1
0.4
-1
25_C
T
a
J
S-31507—Rev. B, 14-Jul-03
Document Number: 71171
= -55_C
2.0
Max
-1.20
-500
-1.2
"1
"2
-10
12
15
20
55
30
60
30
8
2.5
125_C
Unit
mA
mA
mA
nA
mA
pC
ns
ns
W
W
V
S
V
3.0