1SV252 Toshiba America Electronic Components, Inc., 1SV252 Datasheet

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1SV252

Manufacturer Part Number
1SV252
Description
VR (v) = 50 ;; Ir (
Manufacturer
Toshiba America Electronic Components, Inc.
Datasheets

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
1SV252
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
VHF~UHF Band RF Attenuator Applications
Absolute Maximum Ratings
Electrical Characteristics
Marking
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
Reverse voltage
Reverse current
Forward voltage
Total capacitance
Series resistance
Note: C
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
T
Characteristics
Characteristics
is measured by 3 terminal method with capacitance bridge.
(Note)
TOSHIBA Diode Silicon Epitaxial Pin Type
(Ta = 25°C)
(Ta = 25°C)
Symbol
Symbol
T
V
V
V
C
I
I
T
r
stg
R
F
s
R
R
F
T
j
1SV252
I
V
I
V
I
R
F
F
R
R
= 50 mA
= 10 mA, f = 100 MHz
= 10 μA
−55~125
= 50 V
= 50 V, f = 1 MHz
Rating
125
50
50
1
Test Condition
Unit
mA
°C
°C
V
Weight: 0.006 g (typ.)
JEDEC
JEITA
TOSHIBA
Min
50
Typ.
0.93
0.2
3.5
1-2P1C
SC-70
2007-11-01
0.98
Max
0.1
0.4
10
1SV252
Unit: mm
Unit
μA
pF
Ω
V
V

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