STD4NC50 ST Microelectronics, Inc., STD4NC50 Datasheet - Page 3

• Manufacturer Part Number: STD4NC50
• Description: N-channel 500V - 1.3 Ohm - 3.7A - Ipak/dpak Powermesh MOSFET
• Manufacturer: ST Microelectronics, Inc.

ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Safe Operating Area
Symbol
Symbol
Symbol
I
V
SDM
t
t
I
SD
r(Voff)
d(on)
Q
Q
RRM
I
2. Pulse width limited by safe operating area.
Q
Q
SD
t
t
t
t
rr
gs
gd
c
r
f
rr
g
(1)
(2)
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Off-voltage Rise Time
Fall Time
Cross-over Time
Parameter
Parameter
Parameter
V
R
(see test circuit, Figure 3)
V
V
I
I
V
(see test circuit, Figure 5)
V
R
(see test circuit, Figure 5)
SD
SD
DD
DD
GS
DD
G
DD
G
= 4.7
= 4.7
= 3.7A, V
= 3.7A, di/dt = 100A/µs,
= 250V, I
= 400V, I
= 10V
= 100V, T
= 400V, I
Test Conditions
Test Conditions
Test Conditions
V
V
GS
GS
GS
D
D
D
j
= 150°C
Thermal Impedence
= 1.9 A
= 3.7 A,
= 3.7 A,
= 10V
= 0
= 10V
Min.
Min.
Min.
Typ.
Typ.
11.5
Typ.
380
2.3
18
13
12
9
6
8
7
6
STD4NC50/-1
Max.
Max.
Max.
14.8
3.7
1.6
25
Unit
Unit
Unit
nC
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
A
C
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