STD3NC50 ST Microelectronics, Inc., STD3NC50 Datasheet - Page 3

• Manufacturer Part Number: STD3NC50
• Description: N-channel 500V - 2.2 Ohm - 3.2A - Dpak/ipak Powermesh MOSFET
• Manufacturer: ST Microelectronics, Inc.

ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Safe Operating Area
Symbol
Symbol
Symbol
I
V
SDM
t
t
I
SD
r(Voff)
Q
d(on)
Q
RRM
I
Q
2. Pulse width limited by safe operating area.
Q
SD
t
t
t
t
rr
gd
c
r
gs
f
rr
g
(1)
(2)
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Off-voltage Rise Time
Fall Time
Cross-over Time
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Parameter
Parameter
Parameter
V
R
(see test circuit, Figure 3)
V
V
I
I
V
(see test circuit, Figure 5)
V
R
(see test circuit, Figure 5)
SD
SD
DD
DD
GS
DD
G
DD
G
= 4.7
= 4.7
= 3.5 A, V
= 3.5 A, di/dt = 100A/µs,
= 250V, I
= 400V, I
= 10V
= 100V, T
= 400V, I
Test Conditions
Test Conditions
Test Conditions
V
V
GS
GS
D
D
D
GS
j
= 150°C
= 1.5 A
= 3.5 A,
= 3.5 A,
= 10V
= 10V
= 0
Thermal Impedance
Min.
Min.
Min.
STD3NC50 / STD3NC50-1
Typ.
12.5
Typ.
1.64
Typ.
400
2.7
6.1
8.2
10
13
15
13
20
Max.
Max.
Max.
12.8
3.2
1.6
17
Unit
Unit
Unit
nC
nC
nC
µC
ns
ns
ns
ns
ns
ns
A
A
V
A
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