STD2NB50 ST Microelectronics, Inc., STD2NB50 Datasheet - Page 3

• Manufacturer Part Number: STD2NB50
• Description: N-channel 500V 5 Ohm 1A Dpak/ipak Powermesh Power MOSFET
• Manufacturer: ST Microelectronics, Inc.

ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Safe Operating Area
Symbol
Symbol
Symbol
I
V
SDM
t
t
I
SD
r(Voff)
Q
d(on)
Q
RRM
I
Q
2. Pulse width limited by safe operating area.
Q
SD
t
t
t
t
rr
gd
c
r
gs
f
rr
g
(1)
(2)
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Off-voltage Rise Time
Fall Time
Cross-over Time
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Parameter
Parameter
Parameter
V
R
(see test circuit, Figure 3)
V
V
I
I
V
(see test circuit, Figure 5)
V
R
(see test circuit, Figure 5)
SD
SD
DD
DD
GS
DD
G
DD
G
= 4.7
= 4.7
= 1A, V
= 1A, di/dt = 100A/µs,
= 200V, I
= 4000V, I
= 10V
= 100V, T
= 400V, I
Test Conditions
Test Conditions
Test Conditions
V
GS
V
GS
GS
D
D
j
= 0
D
= 150°C
= 0.5A
= 1 A,
= 10V
= 10V
Thermal Impedence
= 1A,
Min.
Min.
Min.
STD2NB50/STD2NB50-1
Typ.
Typ.
Typ.
330
780
2.5
3.5
4.7
20
24
20
24
30
7
Max.
Max.
Max.
1.5
10
1
4
Unit
Unit
Unit
nC
nC
nC
µC
ns
ns
ns
ns
ns
ns
A
A
V
A
3/10