BU2532AW Philips Semiconductors, BU2532AW Datasheet - Page 4

• Manufacturer Part Number: BU2532AW
• Description: Silicon Diffused Power Transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
September 1997
Silicon Diffused Power Transistor
Fig.7. Typical base-emitter saturation voltage.
0.9
0.8
0.7
0.6
120
110
100
0.001
0.01
90
80
70
60
50
40
30
20
10
1
0.1
0
10
0
VBEsat / V
1
Fig.8. Normalised power dissipation.
1E-06
Fig.9. Transient thermal impedance.
0
PD%
Zth / (K/W)
D = 0
Z
PD% = 100 P
0.05
0.02
0.5
0.2
0.1
th j-mb
V
20
BE
IC = 9 A
sat = f (I
1
= f(t); parameter D = t
40
1E-04
60
B
D
); parameter I
IC = 7 A
Tmb / C
/P
2
t / s
D 25˚C
80
Normalised Power Derating
1E-02
= f (T
100
P
D
Tj = 85 C
Tj = 25 C
3
t
mb
p
C
p
120
BU2530/2AL
T
/T
)
IB / A
1E+00
BU2525A
D =
140
t
T
p
t
4
4
IBend
-VBB
Fig.11. Reverse bias safe operating area. T
40
30
20
10
L
Fig.10. Test Circuit RBSOA. V
0
100
C
IC / A
= 1.5 mH; V
C
FB
= 1 - 10 nF; I
LB
-V
CL
BB
= 1450 V; L
VCE / V
= 1 - 5 V;
LC
B(end)
VCC
T.U.T.
= 1.0 - 2.0 A
B
= 0.3 - 2 H;
Initial specification
CC
1000
BU2532AW
BU2530/32AL
= 150 V;
Area where
fails occur
1500
Rev 1.000
j
T
CFB
jmax
VCL