BUL45_06 ON Semiconductor, BUL45_06 Datasheet

BUL45_06

Manufacturer Part Number

BUL45_06

Description

NPN Silicon Power Transistor

Manufacturer

ON Semiconductor

Datasheet

1.BUL45_06.pdf (8 pages)

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BUL45

NPN Silicon Power

Transistor

High Voltage SWITCHMODEt Series

Switchmode Power supplies up to 50 Watts.

Features

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

*For additional information on our Pb−Free strategy and soldering details, please

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

February, 2006 − Rev. 7

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Collector−Emitter Sustaining Voltage

Collector−Base Breakdown Voltage

Emitter−Base Voltage

Collector Current

Base Current

Total Device Dissipation @ T

Derate above 25°C

Operating and Storage Temperature

Thermal Resistance, Junction−to−Case

Thermal Resistance, Junction−to−Ambient

Designed for use in electronic ballast (light ballast) and in

Improved Efficiency Due to:

Full Characterization at 125°C

Tight Parametric Distributions Consistent Lot−to−Lot

Pb−Free Package is Available*

♦

Low Base Drive Requirements (High and Flat DC Current Gain h

Low Power Losses (On−State and Switching Operations)

Fast Switching: t

@ I

= 2.0 A, I

Characteristics

Rating

− Continuous

− Peak (Note 1)

= I

= 100 ns (typ) and t

= 25_C

= 0.4 A

Symbol

CEO

, T

CES

EBO

qJC

qJA

stg

= 3.2 ms (typ)

−65 to 150

Value

Max

1.65

62.5

400

700

9.0

5.0

2.0

0.6

W/_C

_C/W

Unit

Vdc

Adc

)

BUL45

BUL45G

Device

5.0 AMPERES, 700 VOLTS,

POWER TRANSISTOR

BUL45

ORDERING INFORMATION

35 AND 75 WATTS

MARKING DIAGRAM

http://onsemi.com

(Pb−Free)

Package

TO−220

= Device Code

= Assembly Location

= Year

= Work Week

= Pb−Free Package

AY WW

BUL45G

CASE 221A−09

Publication Order Number:

TO−220AB

STYLE 1

50 Units / Rail

Shipping

BUL45/D

Related parts for BUL45_06

BUL45_06 Summary of contents

Page 1

... Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 7 ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (I = 100 mA mH) C Collector Cutoff Current (V = Rated V CE CEO Collector Cutoff Current (V = Rated V CE CES Emitter Cutoff Current (V = ...

Page 3

TYPICAL STATIC CHARACTERISTICS 100 T = 25° 125° −20° 0.01 0.10 1. COLLECTOR CURRENT (AMPS) C Figure 1. DC Current Gain @ 1 Volt 2.0 1 1.5 ...

Page 4

TYPICAL SWITCHING CHARACTERISTICS 1200 B(off 25° 300 125°C J 1000 800 600 400 200 0 0 ...

Page 5

TYPICAL SWITCHING CHARACTERISTICS 150 T = 25°C J 140 T = 125°C J 130 120 110 100 ...

Page 6

dyn dyn −1 90 − − − − TIME Figure 18. Dynamic Saturation Voltage Measurements ...

Page 7

... The BUL45 Bipolar Power Transistors were specially designed for use in electronic lamp ballasts. A circuit designed by ON Semiconductor applications was built 385 V C1 D10 FUSE CTN 0 LINE 220 BUL45 Transistor D1 = 1N4007 Rectifier D2 = 1N5761 Rectifier MUR150 MUR105 ...

Page 8

... American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 8 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. ...

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