IRL520N IRF, IRL520N Datasheet - Page 4

• Manufacturer Part Number: IRL520N
• Description: HEXFET Power MOSFET
• Manufacturer: IRF

IRL520N
1 0 0
8 0 0
6 0 0
4 0 0
2 0 0
0.1
1 0
1
0
Fig 7. Typical Source-Drain Diode
0.4
1
Fig 5. Typical Capacitance Vs.
C
C
C
V
rss
V
Drain-to-Source Voltage
iss
oss
T = 1 75 °C
J
S D
D S
0.6
Forward Voltage
V
C
C
C
, D rain-to-S ourc e V oltage (V )
, S ourc e-to-D rain V oltage (V )
G S
iss
rs s
o ss
= 0V ,
= C
= C
= C
0.8
g s
g d
ds
+ C
+ C
T = 2 5°C
1 0
J
g d
g d
f = 1 M H z
1.0
, C
d s
S H O R TE D
1.2
V
G S
= 0V
1 0 0
1.4
A
A
1 0 0
0.1
1 0
1 5
1 2
1
9
6
3
0
Fig 8. Maximum Safe Operating Area
1
0
T
T
S ing le P u lse
I
D
Fig 6. Typical Gate Charge Vs.
C
J
= 6 .0A
= 25 °C
= 17 5°C
O P E R A TIO N IN TH IS A R E A L IM ITE D
Gate-to-Source Voltage
V
D S
Q , Total G ate C harge (nC )
5
G
, D rain-to-S ource V oltage (V )
1 0
1 0
B Y R
V
V
V
D S
D S
D S
D S (o n)
= 80 V
= 50 V
= 20 V
FO R TE S T C IR C U IT
1 5
S E E FIG U R E 1 3
1 0 0
1 0 µ s
1 0 0 µ s
1 m s
1 0 m s
2 0
1 0 0 0
2 5
A
A