R5009FNX ROHM Co. Ltd., R5009FNX Datasheet - Page 3

• Manufacturer Part Number: R5009FNX
• Description: 10v Drive Nch Mosfet
• Manufacturer: ROHM Co. Ltd.

Electrical characteristics curves
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R5009FNX
100
1.5
0.5
15
10
0.1
10
5
0
2
1
0
1
-50
Fig.7 Static Drain-Source On-State
-50
0
V
V
V
V
I
Fig.1 Typical Output Characteristics( Ⅰ)
D
V
Pulsed
GS
GS
GS
DRAIN-SOURCE VOLTAGE : V
DS
=1mA
CHANNEL TEMPERATURE: Tch (℃)
Fig.4 Gate Threshold Voltage
GS
CHANNEL TEMPERATURE: Tch (℃)
= 7.0V
= 6.5V
= 8.0V
= 10V
Resistance vs. Channel Temperature
= 10V
I
0
0
D
vs. Channel Temperature
= 9A
V
20
GS
= 10V
50
50
I
D
V
V
V
V
= 4.5A
100
GS
GS
GS
GS
100
T
Pulsed
= 6.0V
= 5.5V
= 5.0V
= 4.5V
a
40
=25°C
DS
[V]
150
150
0.01
0.1
100
8
7
6
5
4
3
2
1
0
10
0.1
10
1
1
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
0.1
0.01
Fig.2 Typical Output Characteristics( Ⅱ)
Fig.5 Static Drain-Source On-State
T
Pulsed
V
V
V
V
DRAIN-SOURCE VOLTAGE : V
a
T
Pulsed
=25°C
GS
GS
GS
GS
V
Pulsed
a
= 25°C
Fig.8 Forward Transfer Admittance
DS
= 8.0V
= 7.0V
= 6.5V
= 6.0V
DRAIN-CURRENT : I
Resistance vs. Drain Current
= 10V
0.1
DRAIN-CURRENT : I
vs. Drain Current
1
3/5
1
V
GS
T
T
T
T
= 10V
a
a
a
a
10
= 125°C
= 75°C
= 25°C
=  25°C
D
V
T
T
T
T
V
V
[A]
GS
a
a
a
a
GS
GS
= 125°C
= 75°C
= 25°C
=  25°C
10
= 5.5V
= 5.0V
= 4.5V
D
[A]
DS
[V]
100
100
0.001
0.01
100
0.01
1.5
0.5
0.1
100
10
0.1
10
2
1
0
1
1
0
0
T
0
V
Pulsed
T
a
T
Pulsed
a
T
T
DS
=  25°C
Fig.3 Typical Transfer Characteristics
V
Pulsed
= 125°C
a
a
a
GATE-SOURCE VOLTAGE : V
SOURCE-DRAIN VOLTAGE : V
= 25°C
= 75°C
= 25°C
GATE-SOURCE VOLTAGE : V
Fig.6 Static Drain-Source On-State
GS
= 10V
1
I
D
=0V
= 4.5A
Fig.9 Reverse Drain Current
Resistance vs. Gate Source Voltage
2
0.5
5
vs. Sourse-Drain Voltage
3
4
2011.07 - Rev.A
I
D
10
= 9A
T
T
T
T
1
a
a
a
a
= 125°C
= 75°C
= 25°C
=  25°C
5
Data Sheet
6
GS
GS
SD
[V]
(V)
1.5
[V]
15
7