2SK971 Hitachi Semiconductor, 2SK971 Datasheet
2SK971
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2SK971 Summary of contents
Page 1
... Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Table 1 Absolute Maximum Ratings (Ta = 25° ...
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... Table 2 Electrical Characteristics (Ta = 25°C) Item ——————————————————————————————————————————— ...
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... C 20 Pulse Test (V) DS 2SK971 Maximum Safe Operation Area Ta = 25°C 0.3 1 100 Drain to Source Voltage V (V) DS Typical Transfer Characteristics Pulse Test –25°C 75° 25° ...
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... Drain to Source Saturation Voltage vs. Gate to Source Voltage 2.0 1.6 1.2 0.8 0 Gate to Source Voltage V Static Drain to Source on State Resistance vs. Temperature 0.20 Pulse Test 0.16 0. 0.08 0. –40 0 Case Temperature T Pulse Test 0.005 ( ...
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... 1MHz 3000 Ciss 1000 Coss 300 Crss 100 Drain to Source Voltage V (V) DS Switching Characteristics 500 t d (off) 200 t 100 duty < (on 0.2 0.5 1 Drain Current I (A) D 2SK971 50 20 ...
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... Reverse Drain Current vs. Source to Drain Voltage 20 Pulse Test 0.4 0.8 Source to Drain Voltage 1.0 0.5 0.3 0.1 0.03 0. – 1.2 1.6 2.0 (V) SD Normalized Transient Thermal Impedance vs. Pulse Width 100 Pulse Width PW ( 25°C C ch–c (t) = (t) · ch–c S ch– ...
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... Switching Time Test Circuit Vin Monitor 50 Vin = 10 V Vout Monitor D.U.T Vin R L Vout . (on) DD 2SK971 Wavewforms (off ...