2SK4108 Toshiba Semiconductor, 2SK4108 Datasheet
2SK4108
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2SK4108 Summary of contents
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... (ch−a) = 25°C (initial 4.08 mH Ω mA) Unit GATE W 2. DRAIN (HEAT SINK SOURCE A JEDEC mJ JEITA °C TOSHIBA 2-16C1B °C Weight: 4.6 g (typ.) Unit ° ° 2007-06-29 2SK4108 Unit: mm ― ― ...
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... — 45 — 25 Min Typ. — — — — — — — — — 1300 — 20 2SK4108 Max Unit ±10 μA — V 100 μA — V 4.0 V Ω 0.27 — S — pF — — — — ns — — ...
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... (V) I – −55° ( – 100 25 10 100 3 2SK4108 I – Common source Tc = 25° Pulse Test 16 5.75 12 5 Drain-source voltage V DS (V) V – V ...
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... Case temperature Tc (°C) − (ON 20A 120 160 DS C iss C oss C rss 10 100 − 120 160 200 4 2SK4108 − 100 Common source Tc = 25°C Pulse Test 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 Drain-source voltage V DS (V) − Tc ...
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... DC OPEATION Tc = 25°C 1 ※ Single pulse Ta=25℃ 0.1 Curves must be derated linearly with increase in temperature. 0.01 1 Drain-source voltage V 100 μ DSS max 10 100 1000 ( 2SK4108 E – 1000 800 600 400 200 100 125 Channel temperature (initial VDSS ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2SK4108 20070701-EN 2007-06-29 ...