2SK3554 Fuji Electric, 2SK3554 Datasheet
2SK3554
Manufacturer Part Number
2SK3554
Description
N-CHANNEL SILICON POWER MOSFET
Manufacturer
Fuji Electric
Datasheet
1.2SK3554.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SK3554
Manufacturer:
FUJITSU/富士通
Quantity:
20 000
Company:
Part Number:
2SK3554-01
Manufacturer:
FJUI
Quantity:
4 250
Company:
Part Number:
2SK3554-01
Manufacturer:
FUJITSU
Quantity:
12 500
2SK3554-01
Super FAP-G Series
FUJI POWER MOSFET
*4 V
*1 L=0.67mH, Vcc=48V
Thermalcharacteristics
Item
Maximum ratings and characteristic
(Tc=25°C unless otherwise specified)
Thermal resistance
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
Turn-off time t
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Item
Electrical characteristics (T
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
DS
= <
250V
*5 V
off
on
GS
=-30V
*2 Tch=150°C
<
c
=25°C unless otherwise specified)
V
V
I
I
V
I
E
dV
dV/dt
P
T
T
D
D(puls]
AR *2
Symbol
ch
stg
DSX *5
AS *1
D
DS
GS
*3 I
DS
R
R
Symbol
th(ch-c)
th(ch-a)
Ta=25 °C
Tc=25 °C
Symbol
V
V
I
R
g
C
C
C
td
t
td
t
Q
Q
Q
I
V
t
Q
I
/dt
GSS
AV
f
DSS
r
rr
*3
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
G
GS
SD
F
(on)
(off)
GD
rr
<
=-I
*4
D
, -di/dt=50A/µs, Vcc=BV
Absolute maximum ratings
Ratings
-55 to +150
Test Conditions
Test Conditions
I
I
V
V
V
V
f=1MHz
V
V
R
V
I
V
L=100 µ H T
I
I
-di/dt=100A/µs
V
I
I
channel to ambient
channel to case
D
D
D
F
F
D
D
±100
+150
DS
DS
DS
GS
CC
GS
GS
GS
GS
CC
=25A V
=25A V
=250 µ A
= 250 µ A
=12A
=12.5A
=12.5A
250
220
±25
±30
372
135
=250V V
=200V V
=72V I
=10
25
20
=±30V
=75V
=0V
=10V
=10V
=72V
5
2.02
N-CHANNEL SILICON POWER MOSFET
GS
GS
<
ch
D
V
V
V
=0V T
=12.5A
=0V
=25°C
DS
GS
GS
GS
DS
V
V
DSS
DS
GS
=0V
=0V
=0V
=10V
=25V
T
=V
=0V
ch
, Tch=150°C
ch
=25°C
kV/µs
kV/µs
W
°C
°C
Unit
mJ
GS
V
V
A
A
V
A
=25°C
<
T
T
ch
ch
=125°C
=25°C
TO-220AB
Outline Drawings
Equivalent circuit schematic
Gate(G)
Min.
Min.
8
250
25
3.0
2000
Typ.
Typ.
220
10
75
16
15
20
30
60
20
44
14
16
1.10
0.45
1.5
Source(S)
Drain(D)
3000
Max.
250
100
100
330
62.0
Max.
25
30
30
45
90
30
66
21
24
0.926
5.0
1.65
Units
Units
°C/W
°C/W
ns
V
V
µA
nA
m
S
pF
nC
A
V
µs
µC
1
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2SK3554 Summary of contents
Page 1
... FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic (Tc=25°C unless otherwise specified) Item Symbol Drain-source voltage DSX *5 ...
Page 2
... Characteristics Allowable Power Dissipation PD=f(Tc) 200 175 150 125 100 Typical Transfer Characteristic ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C 100 VGS[V] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80µs Pulse test, Tch=25°C 0.25 VGS= 5 ...
Page 3
... Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA 7.0 6.5 6.0 5.5 max. 5.0 4.5 4.0 3.5 3.0 min. 2.5 2.0 1.5 1.0 0.5 0.0 -50 - Tch [ C] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz VDS [V] Typical Switching Characteristics vs. ID t=f(ID):Vcc=72V, VGS=10V, RG= td(off) tr td(on ...
Page 4
... Transient Thermal Impedance Zth(ch-c)=f(t):D Maximum Avalanche Current Pulsewidth I =f(t ):starting Tch=25°C. Vcc=48V Single Pulse [sec [sec] ...