2SK3505 Sanyo Semicon Device, 2SK3505 Datasheet - Page 3

• Manufacturer Part Number: 2SK3505
• Description: N CHANNEL SILICON POWER MOSFET
• Manufacturer: Sanyo Semicon Device

2SK3505-01MR
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
100
0.1
24
22
20
18
16
14
12
10
10
8
6
4
2
0
1
0.00
IF=f(VSD):80µs Pulse test,Tch=25°C
Typical Forward Characteristics of Reverse Diode
-50
0
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=7A,VGS=10V
Typical Gate Charge Characteristics
VGS=f(Qg):ID=14A, Tch=25°C
0.25
10
-25
0.50
20
0
0.75
30
25
max.
VSD [V]
Tch [ C]
Qg [nC]
1.00
400V
40
50
250V
1.25
50
75
Vcc= 100V
typ.
1.50
100
60
1.75
125
70
2.00
150
80
100p
10n
10p
10
10
10
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1n
1p
2
1
0
10
-50
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
t=f(ID):Vcc=300V, VGS=10V, RG=10
Typical Switching Characteristics vs. ID
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
-1
-25
td(on)
10
10
0
0
0
25
FUJI POWER MOSFET
VDS [V]
ID [A]
Tch [ C]
10
50
td(off)
max.
typ.
min.
1
75
100
10
10
2
Ciss
Coss
Crss
1
125
tf
tr
150
10
3
3