2SK3471 Toshiba Semiconductor, 2SK3471 Datasheet - Page 2

• Manufacturer Part Number: 2SK3471
• Description: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV)
• Manufacturer: Toshiba Semiconductor

Electrical Characteristics (Ta = = = = 25°C)
Source-Drain Ratings and Characteristics
Gate leakage current
Drain-source breakdown voltage
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Continuous drain reverse current (Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Characteristics
Characteristics
Rise time
Turn-ON time
Fall time
Turn-OFF time
(Note 1)
V
V
R
Symbol
(BR) GSS
(BR) DSS
DS (ON)
ïY
I
I
C
C
C
Q
Q
GSS
DSS
V
t
t
Q
oss
on
off
rss
t
t
iss
gd
th
fs
gs
r
f
Symbol
g
V
ï
I
I
DRP
Q
DSF
DR
t
rr
rr
Duty < = 1%, t
V
I
V
I
V
V
V
V
V
V
G
D
GS
DS
DS
GS
DS
DS
DD
GS
= ±10 mA, V
= 10 mA, V
10 V
I
I
dI
0 V
DR
DR
= ±25 V, V
= 500 V, V
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, V
~ - 400 V, V
DR
2
= 0.5 A, V
= 0.5 A, V
(Ta = = = = 25°C)
/dt = 100 A/ms
w
Test Condition
D
D
D
GS
GS
= 10 ms
Test Condition
DS
= 1 mA
= 0.25 A
DS
GS
= 0.25 A
GS
= 0 V
= 0 V, f = 1 MHz
= 0 V
GS
GS
= 0 V
= 0 V
= 10 V, I
I
D
¾
¾
= 0 V
= 0 V,
= 0.25 A
V
DD
D
R
~ - 250 V
= 0.5 A
L
= 1 kW
V
OUT
Min
±30
500
Min
2.0
0.2
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
Typ.
Typ.
190
380
0.4
3.8
1.9
1.9
10
75
24
11
18
54
95
¾
¾
¾
¾
¾
¾
¾
¾
7
2002-09-04
2SK3471
Max
Max
-1.5
±10
100
4.0
0.5
1.5
18
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
Unit
Unit
mA
mA
pF
nC
nC
ns
ns
W
V
V
V
S
A
A
V