2SK3397 Toshiba Semiconductor, 2SK3397 Datasheet - Page 2

• Manufacturer Part Number: 2SK3397
• Description: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS)
• Manufacturer: Toshiba Semiconductor

Electrical Characteristics (Tc
Source-Drain Ratings and Characteristics
Marking
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Continuous drain reverse current (Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
K3397
Characteristics
※
Characteristics
Rise time
Turn-ON time
Fall time
Turn-OFF time
Type
(Note 1)
※ Lot Number
V
V
R
Symbol
(BR) DSS
(BR) DSX
DS (ON)
I
I
C
C
C
Q
Q
GSS
DSS
V
Y
t
t
Q
25°C)
oss
on
off
rss
t
t
iss
gd
th
fs
gs
r
f
Symbol
g
V
I
I
DRP
Q
DSF
DR
t
rr
rr
V
V
I
I
V
V
V
V
Duty
V
Month (starting from alphabet A)
Year
V
D
D
GS
DS
DS
GS
DS
DS
DD
GS
10 V
0 V
I
I
dI
10 mA, V
10 mA, V
DR
DR
DR
30 V, V
10 V, I
10 V, I
10 V, V
10 V, I
24 V, V
1%, t
2
16 V, V
(Tc
/dt
(last number of the christian era)
70 A, V
70 A, V
Test Condition
w
D
D
D
GS
GS
30 A/ s
GS
GS
GS
Test Condition
DS
25°C)
10 s
1 mA
35 A
35 A
GS
GS
0 V
0 V
0 V, f
10 V, I
20 V
I
0 V
D
0 V
0 V,
V
35 A
DD
D
1 MHz
R
L
70 A
15 V
V
0.43
OUT
Min
Min
1.5
30
15
55
5000
1000
Typ.
Typ.
110
550
180
110
4.0
8.0
25
48
87
23
40
40
2002-02-27
2SK3397
Max
Max
3..0
210
6.0
10
70
1.7
10
Unit
Unit
m
pF
nC
nC
ns
ns
V
V
S
A
A
V
A
A