2SK3135L Hitachi Semiconductor, 2SK3135L Datasheet - Page 3

• Manufacturer Part Number: 2SK3135L
• Description: Silicon N Channel MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

Electrical Characteristics (Ta = 25 C)
Item
Drain to source breakdown voltage V
Gate to source leak current
Zero gate voltege drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Note:
1. Pulse test
Symbol Min
I
I
V
R
|y
Ciss
Coss
Crss
Qg
Qgs
Qgd
t
t
t
t
V
t
GSS
DSS
d(on)
r
d(off)
f
rr
(BR)DSS
GS(off)
DF
DS(on)
fs
|
60
—
—
1.0
—
—
50
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
6.0
8.0
80
7100
1000
300
125
25
25
60
300
520
330
1.05
90
Max
—
10
2.5
7.5
12
—
—
—
—
—
—
—
—
—
—
—
—
—
0.1
2SK3135(L),2SK3135(S)
Unit
V
V
m
m
S
pF
pF
pF
nc
nc
nc
ns
ns
ns
ns
V
ns
A
A
Test Conditions
I
V
V
I
I
I
I
V
V
f = 1 MHz
V
V
I
V
R
I
I
diF/ dt = 50 A/ s
D
D
D
D
D
D
F
F
GS
DS
DS
GS
DD
GS
GS
L
= 75 A, V
= 75 A, V
= 10 mA, V
= 1 mA, V
= 30 A, V
= 30 A, V
= 30 A, V
= 75 A
= 0.75
= 20 V, V
= 60 V, V
= 10 V
= 0
= 25 V
= 10 V
= 10 V, I
GS
GS
GS
GS
DS
DS
D
GS
GS
= 40 A
= 0
= 0
= 10 V
= 10 V
= 4 V
DS
= 10 V
= 0
= 0
= 0
Note 1
Note 1
Note 1
Note 1
3