2SK3000 Hitachi Semiconductor, 2SK3000 Datasheet - Page 2

• Manufacturer Part Number: 2SK3000
• Description: Silicon N Channel MOS FET Low Frequency Power Switching
• Manufacturer: Hitachi Semiconductor

2SK3000
Absolute Maximum Ratings (Ta = 25 C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Note:
Electrical Characteristics (Ta = 25 C)
Item
Drain to source breakdown
voltage
Drain to source voltage
Gate to source breakdown
voltage
Zero gate voltege drain current I
Gate to source leak current
Gate to source cutoff voltage V
Static drain to source on state
resistance
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance Crss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Note:
2
1. PW
2. When using the glass epoxy board (10 mm x 10 mm x 1 mm
3. Pulse test
4. Marking is “ZY”.
10 s, duty cycle
Symbol
V
V
V
I
R
R
|y
Ciss
Coss
t
t
t
t
DSS
GSS
d(on)
r
d(off)
f
(BR)DSS
DS(SUS)
(BR)GSS
GS(off)
DS(on)
DS(on)
fs
|
1 %
Symbol
V
V
I
I
I
Pch
Tch
Tstg
D
D(pulse)
DR
DSS
GSS
Min
40
40
—
—
1.1
—
—
0.5
—
—
—
—
—
—
—
Note2
10
Note1
Typ
—
—
—
—
—
—
0.3
0.25
1.2
14.0
68
3.0
0.12
0.6
1.7
1.4
Ratings
40
1.0
4.0
1.0
400
150
–55 to +150
Max
60
—
—
1.0
2.1
0.5
0.3
—
—
—
—
—
—
—
—
10
5
t
)
Unit
V
V
V
V
S
pF
pF
pF
A
A
s
s
s
s
Test Conditions
I
L = 100 H, I
I
V
V
I
I
V
I
V
I
V
V
V
f = 1MHz
V
R
D
G
D
D
D
D
DS
GS
GS
GS
DS
DS
GS
GS
L
= 100 A, V
= 100 A, V
= 10 A, V
= 450 mA
= 450 mA
= 450 mA
Unit
V
V
A
A
A
mW
= 22
C
C
= 40 V, V
= 6.5V, V
= 4V
= 10V
= 10V
= 10V
= 0
= 4V, I
Note3
Note3
Note3
D
DS
= 450 mA
D
GS
GS
= 3 A
DS
DS
= 5V
= 0
= 0
= 0
= 0