2SK2926 Hitachi Semiconductor, 2SK2926 Datasheet - Page 7

• Manufacturer Part Number: 2SK2926
• Description: Silicon N Channel MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

Vin
15 V
50
40
30
20
10
0
Source to Drain Voltage
10 V
0.4
Reverse Drain Current vs.
Source to Drain Voltage
Avalanche Test Circuit
V
Monitor
5 V
50
DS
0.8
Rg
V
GS
1.2
= 0, –5 V
Pulse Test
D. U. T
V
I
Monitor
1.6
SD
AP
L
(V)
2.0
V
DD
0
V
200
160
120
80
40
DD
0
25
E
AR
Maximum Avalanche Energy vs.
Channel Temperature Derating
Channel Temperature Tch ( C)
I
=
AP
50
1
2
2SK2926(L), 2SK2926(S)
I
• L • I
Avalanche Waveform
D
75
AP
2
•
100
I
V
duty < 1 %
Rg > 50
AP
DD
V
= 40 A
DSS
= 25 V
V
125
DSS
V
– V
DS
V
DD
(BR)DSS
150
7