2SK1772 Hitachi Semiconductor, 2SK1772 Datasheet - Page 4

• Manufacturer Part Number: 2SK1772
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

2SK1772
4
2.0
1.5
1.0
0.5
2.0
1.6
1.2
0.8
0.4
0
0
5 V
10 V
Drain to Source Voltage
Power vs. Temparature Derating
Typical Output Characteristics
Ambient Temperature
1
50
4 V
2
100
3.5 V
V
GS
3
3.0 V
2.5 V
= 2 V
150
Pulse test
V
Ta (°C)
4
DS
(V)
200
5
0.03
0.01
0.3
0.1
1.0
0.8
0.6
0.4
0.2
10
3
1
0.1
0
Operation in this area is
limited by R
V
Pulse test
Drain to Source Voltage
Ta = 25°C
Gate to Source Voltage
DS
Typical Transfer Characteristics
0.3
Maximum Safe Operation Area
= 10 V
1
DS(on)
1
2
3
PW = 100 µs
3
Tc = 25°C
–25°C
10
75°C
V
V
DS
GS
4
30
(V)
(V)
100
5