2SK1335L Hitachi Semiconductor, 2SK1335L Datasheet
2SK1335L
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2SK1335L Summary of contents
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Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPAK ...
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Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes ...
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Power vs. Temperature Derating 100 Case Temperature T (°C) C Typical Output Characteristics Pulse Test 4.0 ...
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Drain to Source Saturation Voltage vs. Gate to Source Voltage Gate to Source Voltage V Static Drain to Source on State Resistance vs. Temperature 2 ...
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Body to Drain Diode Reverse Recovery Time 1,000 di/ 25°C 500 Pulse Test 200 100 0.05 0.1 0.2 0.5 1 Reverse Drain Current I Dynamic Input Characteristics ...
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Normalized Transient Thermal Impedance vs. Pulse Width 1.0 0.5 0.3 0.2 0.1 0.1 0.05 0.03 0.01 10 100 Switching Time Test Circuit Vin Monitor 50 Vin Reverse Drain Current vs. Source ...
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Hitachi Code DPAK (L)-(1) JEDEC — EIAJ Conforms Weight (reference value) 0.42 g Unit: mm ...
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... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...