2SK1303 Hitachi Semiconductor, 2SK1303 Datasheet - Page 6

• Manufacturer Part Number: 2SK1303
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

2SK1303
6
5,000
2,000
1,000
100
80
60
40
20
500
200
100
0
50
0.5
V
DS
di/dt = 50 A/ s, Ta = 25°C
V
Pulse Test
Dynamic Input Characteristics
GS
V
1.0
Reverse Drain Current I
20
Body to Drain Diode Reverse
DD
= 0
Gate Charge Qg (nc)
= 80 V
50 V
25 V
2
Recovery Time
40
V
DD
80 V
5
= 25 V
50 V
60
V
GS
10
I
D
DR
80
= 30 A
20
(A)
100
50
20
16
12
8
4
0
10,000
1,000
1,000
500
200
100
100
50
20
10
10
0.5
0
Drain to Source Voltage V
1.0
t
10
Switching Characteristics
r
t
t
Drain to Source Voltage
Typical Capacitance vs.
f
d (on)
Drain Current I
2
t
d (off)
20
V
PW = 2 s, duty < 1%
GS
5
= 10 V, V
Ciss
Coss
Crss
30
10
D
(A)
DD
V
f = 1 MHz
DS
20
GS
40
=
.
.
= 0
(V)
30 V
50
50