2SK1215 Hitachi Semiconductor, 2SK1215 Datasheet - Page 2

• Manufacturer Part Number: 2SK1215
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

2SK1215
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Gate current
Channel power dissipation
Channel temperature
Storage temperature
Note:
Electrical Characteristics (Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate cutoff current
Drain current
Gate to source cutoff voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
Noise figure
Note:
Grade
Mark
I
See characteristic curves of 2SK359.
2
DSS
1. V
1. The 2SK1215 is grouped by I
GS
D
IGD
4 to 8
= –4 V
E
IGE
6 to 10
Symbol
V
I
I
V
|y
Ciss
Coss
Crss
PG
NF
GSS
DSS
(BR)DSX
GS(off)
fs
|
*
1
DSS
Min
20
—
4
0
8
—
—
—
24
—
as follows.
F
IGF
8 to 12
Symbol
V
V
I
I
Pch
Tch
Tstg
Typ
—
—
—
—
14
2.5
1.6
0.03
—
—
D
G
DSX
GSS
*
1
Max
—
12
–2.0
—
—
—
—
—
3
20
Unit
V
nA
mA
V
mS
pF
pF
pF
dB
dB
Ratings
20
30
100
150
–55 to +150
5
1
Test conditions
I
V
V
V
V
V
V
f = 100 MHz
D
GS
DS
DS
DS
DS
DS
= 100 A, V
= 10 V, I
= 10 V, V
= 10 V, V
= 10 V, V
= 5 V, V
= 10 V, V
D
Unit
V
V
mA
mA
mW
GS
GS
GS
C
C
DS
GS
= 10 A
GS
= 0, f = 1 kHz
= 0, f = 1 MHz
= 0,
= 0
= 0
= –4 V