2SK1153 Hitachi Semiconductor, 2SK1153 Datasheet - Page 6

• Manufacturer Part Number: 2SK1153
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

2SK1153, 2SK1154
6
1,000
500
400
300
200
100
500
200
100
50
20
10
0
0.05
di/dt = 100 A/ s, Ta = 25°C
V
Pulse Test
V
0.1
GS
Reverse Drain Current I
Dynamic Input Characteristics
Body to Drain Diode Reverse
DS
4
= 0
Gate Charge Qg (nc)
V
0.2
DD
V
250 V
100 V
Recovery Time
DD
= 100 V
400 V
8
250 V
= 400 V
0.5
V
12
GS
1.0
I
DR
D
16
= 3 A
2
(A)
20
5
20
16
12
8
4
0
1,000
500
200
100
100
50
20
10
10
0.05
5
1
0
V
PW = 2 s, duty < 1%
GS
Drain to Source Voltage V
0.1
vs. Drain to Source Voltage
= 10 V V
10
Switching Characteristics
Drain Current I
Typical Capacitance
0.2
t
r
Coss
Ciss
Crss
20
DD
t
t
0.5
d (on)
= 30 V
d (off)
•
•
t
f
30
D
1.0
(A)
DS
V
f = 1 MHz
2
40
GS
(V)
= 0
5
50