2SK1151 Hitachi Semiconductor, 2SK1151 Datasheet - Page 6

• Manufacturer Part Number: 2SK1151
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

2SK1151(L)(S), 2SK1152(L)(S)
6
1,000
500
200
100
500
400
300
200
100
50
20
10
0.05
0
di/dt = 100A/ s, Ta = 25°C
V
Pulse Test
0.1
GS
Reverse Drain Current I
V
Dynamic Input Characteristics
Body to Drain Diode Reverse
DS
= 0
2
Gate Charge Qg (nc)
0.2
V
250 V
100 V
Recovery Time
DD
4
100 V
250 V
400 V
= 400 V
0.5
V
GS
6
1.0
I
D
DR
= 1.5 A
2
8
(A)
10
5
20
16
12
8
4
0
1,000
100
100
10
50
20
10
1
0.05
5
2
1
0
Drain to Source Voltage V
0.1
V
PW = 2 s, duty < 1%
vs. Drain to Source Voltage
10
GS
Switching Characteristics
Typical Capacitance
= 10 V V
Drain Current I
0.2
t
d (on)
t
r
Ciss
20
Coss
t
Crss
f
t
0.5
DD
d (off)
= 30 V
•
30
•
V
f = 1 MHz
1.0
GS
D
(A)
= 0
DS
40
2
(V)
50
5