IRFNL210B Fairchild Semiconductor, IRFNL210B Datasheet - Page 4

• Manufacturer Part Number: IRFNL210B
• Description: 200V N-Channel MOSFET
• Manufacturer: Fairchild Semiconductor

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©2002 Fairchild Semiconductor Corporation
Typical Characteristics
10
10
10
10
10
-1
-2
-3
1
0
10
1.2
1.1
1.0
0.9
0.8
0
Figure 9. Maximum Safe Operating Area
-100
Figure 7. Breakdown Voltage Variation
-50
Operation in This Area
is Limited by R
V
DS
T
, Drain-Source Voltage [V]
J
1 0
, Junction Temperature [
1 0
1 0
1 0
DC
0
10
DS(on)
※ Notes :
-1
2
1
0
1 0
1. T
2. T
3. Single Pulse
1
-4
C
J
= 150
= 25
D = 0 . 5
0 . 0 2
0 . 0 1
0 . 0 5
0 . 2
0 . 1
1 s
o
C
o
C
50
100 ms
Figure 11. Transient Thermal Response Curve
1 0
10 ms
100
s in g le p u ls e
(Continued)
-3
o
C]
※ Notes :
10
1 ms
t
1. V
2. I
100 s
2
1
, S q u a re W a v e P u ls e D u r a tio n [s e c ]
D
G S
= 250 μ A
= 0 V
150
1 0
-2
200
1 0
-1
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
25
1 0
Figure 8. On-Resistance Variation
※ N o te s :
Figure 10. Maximum Drain Current
0
1 . Z
2 . D u ty F a c to r, D = t
3 . T
-50
θ J L
J M
50
- T
(t) = 4 0 ℃ /W M a x .
C
vs Case Temperature
= P
T
vs Temperature
J
T
1 0
D M
, Junction Temperature [
C
0
, Case Temperature [ ℃ ]
1
* Z
75
1
θ J C
/t
2
(t)
50
1 0
100
2
100
o
C]
125
※ Notes :
1. V
2. I
150
D
GS
= 0.5 A
= 10 V
Rev. A, December 2002
200
150