IRFIZ48V International Rectifier, IRFIZ48V Datasheet - Page 2

• Manufacturer Part Number: IRFIZ48V
• Description: Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=39A)
• Manufacturer: International Rectifier

Source-Drain Ratings and Characteristics
IRFIZ48V
Electrical Characteristics @ T

‚
ƒ
„
Notes:
I
I
C
E
V
R
V
g
Q
Q
Q
t
t
t
t
L
L
C
C
I
I
V
t
Q
t
DSS
GSS
SM
d(on)
r
d(off)
f
S
rr
on
V
fs
D
S
as
2
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
SD
g
gs
gd
rr
Repetitive rating; pulse width limited by
I
Pulse width
(BR)DSS
T
R
max. junction temperature. ( See fig. 11 )
Starting T
SD
J
G
= 25 , I
175°C
72A, di/dt
/ T
J
J
Drain-to-Source Leakage Current
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Internal Drain Inductance
Internal Source Inductance
= 25°C, L = 64µH
AS
300µs; duty cycle
= 72A. (See Figure 12)
151A/µs, V
‡
Parameter
Parameter
DD
V
2%.
(BR)DSS
J
,
= 25°C (unless otherwise specified)
‚‡
‡
ˆ
…
†
This is a typical value at device destruction and represents
This is a calculated value limited to T
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 780
operation outside rated limits.
Min. Typ. Max. Units
Min. Typ. Max. Units
Uses IRFZ48V data and test conditions.
t = 60s, f = 60Hz
2.0
60
35
–––
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
0.064 –––
1985 –––
–––
––– 12.0
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
200
157
166
496
–––
–––
–––
155
7.6
4.5
91
7.5
70
…
170
–––
–––
–––
250
100
110
–––
–––
–––
–––
–––
–––
–––
100
233
4.0
2.0
25
29
36
290
39
†
V/°C
m
mJ
nC
nH
pF
nC
µA
nA
ns
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
I
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
integral reverse
D
D
AS
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 72A
= 72A
= 25°C, I
= 25°C, I
= 72A, L = 64mH
= 0.34 , See Fig. 10
= 9.1
= 0V, I
= 10V, I
= V
= 25V, I
= 60V, V
= 48V, V
= 20V
= -20V
= 48V
= 10V, See Fig. 6 and 13
= 30V
= 0V
= 25V
GS
J
, I
= 175°C .
D
S
F
D
D
D
Conditions
= 250µA
GS
GS
Conditions
= 72A
= 72A, V
= 43A
= 250µA
= 43A
„‡
= 0V
= 0V, T
„‡
D
GS
= 1mA
„
J
‡
www.irf.com
„‡
= 150°C
= 0V
G
G
‡
S
„‡
+L
„‡
D
D
S
S
)
D