IRF7842 International Rectifier, IRF7842 Datasheet - Page 2

• Manufacturer Part Number: IRF7842
• Description: Power MOSFET(Vdss = 40 V)
• Manufacturer: International Rectifier

IRF7842
BV
∆ΒV
R
V
∆V
I
I
gfs
Q
Q
Q
R
t
t
t
t
C
C
C
E
I
I
I
V
t
Q
Static @ T
Avalanche Characteristics
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
2
GS(th)
AS
SD
DS(on)
G
iss
oss
rss
g
sw
oss
rr
Q
Q
Q
Q
GS(th)
DSS
gs1
gs2
gd
godr
DSS
/∆T
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Avalanche Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= 25°C (unless otherwise specified)
Parameter
Ù
Parameter
Parameter
gs2
™
+ Q
gd
)
d
Min. Typ. Max. Units
Min. Typ. Max. Units
1.35
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–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
40
81
0.037
4500
- 5.6
10.6
12.8
–––
–––
–––
–––
–––
–––
–––
680
310
–––
–––
–––
4.0
4.7
9.6
2.8
1.3
5.0
33
10
18
14
12
21
99
11
Typ.
2.25
-100
TBD
–––
–––
––– mV/°C
150
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
140
150
5.0
5.9
1.0
3.1
1.0
50
17
V/°C
mΩ
nC
nC
nC
µA
nA
pF
ns
ns
Ω
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
I
V
V
I
Clamped Inductive Load
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DS
DD
GS
DS
= 14A
= 14A
= 25°C, I
= 25°C, I
= 0V, I
= 10V, I
= 4.5V, I
= V
= 32V, V
= 32V, V
= 20V
= -20V
= 20V, I
= 20V
= 4.5V
= 16V, V
= 20V, V
= 0V
= 20V
GS
Max.
, I
50
14
D
Conditions
Conditions
D
S
F
D
D
= 250µA
D
GS
GS
GS
GS
= 250µA
= 14A, V
= 14A, V
= 17A
= 14A
= 14A
= 0V
= 0V, T
= 0V
= 4.5V
e
www.irf.com
D
e
e
= 1mA
DD
GS
J
e
= 125°C
= 20V
= 0V
Units
mJ
A
e