IRF7831 International Rectifier, IRF7831 Datasheet - Page 4

• Manufacturer Part Number: IRF7831
• Description: HEXFETPower MOSFET
• Manufacturer: International Rectifier

4
100000
1000.0
10000
100.0
1000
10.0
100
1.0
0.1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.2
1
Drain-to-Source Voltage
T J = 150°C
V DS , Drain-to-Source Voltage (V)
V SD , Source-toDrain Voltage (V)
0.4
Forward Voltage
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Coss
Ciss
Crss
0.6
10
f = 1 MHZ
T J = 25°C
0.8
V GS = 0V
1.0
1.2
100
1000
100
Fig 8. Maximum Safe Operating Area
12
10
10
8
6
4
2
0
1
0.1
Fig 6. Typical Gate Charge Vs.
0
Tc = 25°C
Tj = 150°C
Single Pulse
I D = 12A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
20
Q G Total Gate Charge (nC)
1.0
OPERATION IN THIS AREA
LIMITED BY R DS (on)
40
V DS = 24V
VDS= 15V
10.0
60
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100µsec
1msec
10msec
100.0
80
1000.0
100