IRF7606 International Rectifier, IRF7606 Datasheet - Page 6

• Manufacturer Part Number: IRF7606
• Description: Power MOSFET(Vdss=-30V/ Rds(on)=0.09ohm)
• Manufacturer: International Rectifier

IRF7606
V
GS
Re-Applied
Voltage
Reverse
Recovery
Current
*
Reverse Polarity of D.U.T for P-Channel
+
-
R
***
D.U.T
G
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
GS
*
P.W.
SD
DS
= 5.0V for Logic Level and 3V Drive Devices
Fig 12. For P-Channel HEXFETS
Peak Diode Recovery dv/dt Test Circuit
Waveform
Waveform
Ripple
Body Diode
Period
Body Diode Forward
+
-
Diode Recovery
5%
dv/dt controlled by R
I
D.U.T. - Device Under Test
Current
SD
controlled by Duty Factor "D"
dv/dt
Forward Drop
Circuit Layout Considerations
di/dt
Current Transformer
Low Stray Inductance
Ground Plane
Low Leakage Inductance
D =
-
G
Period
P.W.
+
[
[
[
V
V
I
SD
GS
DD
]
]
=10V
+
-
V
] ***
DD