IRF7494 International Rectifier, IRF7494 Datasheet - Page 4

• Manufacturer Part Number: IRF7494
• Description: HEXFET Power MOSFET
• Manufacturer: International Rectifier

IRF7494
100.00
100000
10.00
10000
4
1.00
0.10
1000
100
10
Fig 5. Typical Capacitance vs.
0.2
Fig 7. Typical Source-Drain Diode
1
Drain-to-Source Voltage
0.3
V DS , Drain-to-Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
C rss
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
C iss
C oss
Forward Voltage
0.4
T J = 175°C
10
0.5
f = 1 MHZ
0.6
0.7
100
T J = 25°C
0.8
V GS = 0V
0.9
1000
1.0
1000
12.0
10.0
100
8.0
6.0
4.0
2.0
0.0
0.1
10
1
Fig 8. Maximum Safe Operating Area
0
1
Fig 6. Typical Gate Charge vs.
I D = 3.1A
T A = 25°C
Tj = 175°C
Single Pulse
5
Gate-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
10
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
15
V DS = 120V
V DS = 75V
V DS = 30V
20
25
100
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10msec
30
100µsec
1msec
35
1000
40