IRF7493 International Rectifier, IRF7493 Datasheet - Page 4

• Manufacturer Part Number: IRF7493
• Description: HEXFET Power MOSFET
• Manufacturer: International Rectifier

IRF7493
100000
4
10000
100.0
1000
10.0
100
1.0
0.1
10
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.2
1
Drain-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
T J = 150°C
V SD , Source-toDrain Voltage (V)
V GS = 0V,
C iss
C rss
C oss = C ds + C gd
0.4
Forward Voltage
= C gd
= C gs + C gd , C ds
Ciss
Coss
Crss
0.6
f = 1 MHZ
10
T J = 25°C
0.8
V GS = 0V
1.0
SHORTED
1.2
100
1000
100
0.1
20
16
12
10
8
4
0
1
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
0
0
Tc = 25°C
Tj = 150°C
Single Pulse
I D = 5.6A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
10
Q G Total Gate Charge (nC)
1
OPERATION IN THIS AREA
LIMITED BY R DS (on)
20
V DS = 64V
VDS= 40V
VDS= 16V
30
10
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40
100
100µsec
1msec
10msec
50
1000
60