IRF6215 International Rectifier, IRF6215 Datasheet - Page 2

• Manufacturer Part Number: IRF6215
• Description: HEXFET Power MOSFET
• Manufacturer: International Rectifier

IRF6215
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:
R
L
V
V
g
I
Q
Q
Q
t
t
t
t
L
C
C
C
I
I
V
t
Q
t
I
DSS
d(on)
r
d(off)
f
SM
on
GSS
S
rr
D
V
fs
S
DS(on)
(BR)DSS
GS(th)
iss
oss
rss
SD
g
gs
gd
rr
Repetitive rating; pulse width limited by
(BR)DSS
max. junction temperature. ( See fig. 11 )
R
Starting T
G
= 25 , I
/ T
J
J
Static Drain-to-Source On-Resistance
Internal Drain Inductance
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
= 25°C, L = 14mH
AS
= -6.6A. (See Figure 12)
Parameter
Parameter
J
= 25°C (unless otherwise specified)
-150
I
Pulse width
T
–––
–––
–––
-2.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
SD
3.6
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
J
Intrinsic turn-on time is negligible (turn-on is dominated by L
175°C
-6.6A, di/dt
-0.20 –––
4.5
–––
––– 0.29
––– 0.58
–––
–––
–––
––– -250
–––
––– -100
–––
–––
–––
7.5
860
220
130
–––
–––
–––
160
1.2
14
36
53
37
–––
–––
–––
-4.0
–––
100
–––
–––
–––
–––
–––
–––
–––
-1.6
-25
240
8.1
1.7
300µs; duty cycle
-44
66
35
-13
-620A/µs, V
V/°C
µA
nA
nC
nH
pF
µC
ns
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
di/dt = -100A/µs
T
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
D
GS
DS
= -6.6A
= -6.6A
= 25°C, I
= 25°C, I
DD
= 6.8
= 12
= V
= -50V, I
= -150V, V
= -120V, V
= -120V
= -25V
= 0V, I
= -10V, I
= -10V, I
= 20V
= -20V
= -10V, See Fig. 6 and 13
= -75V
= 0V
2%.
GS
V
(BR)DSS
, I
See Fig. 10
D
S
F
D
Conditions
= 250µA
D
D
D
Conditions
= -6.6A, V
= -6.6A
= -250µA
= -6.6A
= -6.6A
= -6.6A
GS
GS
,
= 0V
= 0V, T
D
= 1mA
GS
G
, T
, T
J
= 0V
= 150°C
J
J
G
= 25°C
= 150°C
S
+L
D
S
D
S
D
)