IRF1407 International Rectifier, IRF1407 Datasheet - Page 2

• Manufacturer Part Number: IRF1407
• Description: Power MOSFET(Vdss=75V/ Rds(on)=0.0078ohm/ Id=130A)
• Manufacturer: International Rectifier

IRF1407
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
I
I
I
I
V
t
Q
t
V
R
V
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
Q
R
S
T
L
L
Notes:
DSS
GSS
S
SM
rr
on
d(on)
r
d(off)
f
2
V
fs
D
S
SD
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
oss
oss
oss
rr
g
gs
gd
(BR)DSS
Repetitive rating; pulse width limited by
Pulse width
I
T
R
max. junction temperature. (See fig. 11).
Starting T
SD
J
G
eff.
= 25 , I
175°C
/ T
78A, di/dt
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) Q
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
J
Drain-to-Source Leakage Current
Effective Output Capacitance U
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
= 25°C, L = 0.13mH
AS
400µs; duty cycle
= 78A. (See Figure 12).
320A/µs, V
Parameter
Parameter
DD
V
2%.
(BR)DSS
J
= 25°C (unless otherwise specified)
,
U
VCalculated continuous current based on maximum allowable
WLimited by T
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
2.0
C
–––
–––
–––
–––
–––
75
74
–––
as C
oss
junction temperature. Package limitation current is 75A.
Intrinsic turn-on time is negligible (turn-on is dominated by L
avalanche performance.
eff. is a fixed capacitance that gives the same charging time
oss
5600 –––
5800 –––
1100 –––
0.09
–––
–––
–––
110
390
–––
––– 0.0078
–––
–––
–––
–––
–––
––– -200
160
150
150
140
890
190
560
4.5
35
54
11
7.5
while V
130V
–––
170
590
–––
–––
–––
250
200
250
–––
–––
–––
–––
–––
–––
–––
–––
1.3
4.0
520
20
52
81
Jmax
DS
is rising from 0 to 80% V
, see Fig.12a, 12b, 15, 16 for typical repetitive
V/°C
nH
nC
µA
nA
nC
ns
pF
ns
V
A
V
V
S
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0KHz, See Fig. 5
V
V
V
integral reverse
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 78A
= 78A
= 25°C, I
= 25°C, I
= 2.5
= 0V, I
= 10V, I
= 10V, I
= 25V, I
= 75V, V
= 60V, V
= 20V
= -20V
= 60V
= 10VT
= 38V
= 10V T
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
D
S
F
DS
D
D
D
Conditions
DS
DS
= 250µA
GS
GS
Conditions
= 78A, V
= 78A
= 250µA
= 78A
= 78A T

= 0V to 60V
= 1.0V, ƒ = 1.0KHz
= 60V, ƒ = 1.0KHz
DSS
= 0V
= 0V, T
T
.
www.irf.com
D
GS
= 1mA
J
= 0VT
= 150°C
G
G
S
+L
D
D
S
)
S
D