IRF1405 International Rectifier, IRF1405 Datasheet - Page 2

• Manufacturer Part Number: IRF1405
• Description: Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=169A)
• Manufacturer: International Rectifier

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‚
ƒ
„
IRF1405
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:
I
I
I
I
V
t
Q
t
V
R
V
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
L
L
DSS
SM
GSS
S
rr
on
d(on)
r
d(off)
f
2
V
fs
D
S
SD
(BR)DSS
GS(th)
rr
DS(on)
g
gs
gd
iss
oss
rss
oss
oss
oss
Repetitive rating; pulse width limited by
I
Pulse width
R
T
max. junction temperature. (See fig. 11).
(BR)DSS
Starting T
SD
J
G
eff.
= 25 , I
175°C
101A, di/dt
/ T
J
J
Drain-to-Source Leakage Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
= 25°C, L = 0.11mH
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance …
AS
Internal Drain Inductance
Internal Source Inductance
400µs; duty cycle
= 101A. (See Figure 12).
210A/µs, V
Parameter
Parameter
DD
2%.
V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
…
†
‡
C
as C
––– 0.057 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
2.0
–––
–––
–––
–––
–––
55
69
–––
Calculated continuous current based on maximum allowable
Limited by T
oss
junction temperature. Package limitation current is 75A.
avalanche performance.
Intrinsic turn-on time is negligible (turn-on is dominated by L
eff. is a fixed capacitance that gives the same charging time
oss
5480 –––
1210 –––
5210 –––
1500 –––
–––
–––
–––
–––
170
–––
–––
–––
250
–––
–––
––– -200
190
130
110
280
900
4.6
4.5
88
while V
44
62
13
7.5
169†
–––
130
380
–––
Jmax
–––
250
200
260
–––
–––
–––
–––
–––
–––
–––
1.3
4.0
5.3
680
20
66
93
DS
is rising from 0 to 80% V
, see Fig.12a, 12b, 15, 16 for typical repetitive
V/°C
m
nC
nH
µA
nA
nC
ns
pF
ns
A
V
V
V
S
showing the
p-n junction diode.
T
T
di/dt = 100A/µs „
V
V
V
MOSFET symbol
integral reverse
Reference to 25°C, I
V
V
V
V
V
V
I
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
V
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 101A
= 110A
= 25°C, I
= 25°C, I
= 1.1
= 10V, I
= 25V, I
= 55V, V
= 44V, V
= 44V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V„
= 38V
= 10V „
= 0V
= 0V, V
= 0V, V
= 0V, V
D
S
F
DS
D
D
D
Conditions
DS
DS
= 250µA
GS
GS
= 101A, V
= 101A
Conditions
= 250µA
= 110A
= 101A „
DSS
= 0V to 44V
= 1.0V, ƒ = 1.0MHz
= 44V, ƒ = 1.0MHz
= 0V
= 0V, T
.
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D
= 1mA
GS
J
= 150°C
G
= 0V
G
S
+L
„
D
S
D
)
S
D