IRF1302 International Rectifier, IRF1302 Datasheet

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IRF1302

Manufacturer Part Number
IRF1302
Description
Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=180A)
Manufacturer
International Rectifier
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
IRF1302
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRF1302L
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRF1302S
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
IRF1302S
Quantity:
16 736
Absolute Maximum Ratings
Thermal Resistance
Benefits
Description
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET
techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating
temperature, fast switching speed and improved repetitive avalanche
rating. These benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide variety
of other applications.
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
R
www.irf.com
D
D
DM
AR
D
GS
AS
AR
J
STG
@ T
@ T
JC
CS
JA
@T
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient (PCB mount)
®
Power MOSFET utilizes the lastest processing
Parameter
Parameter
AUTOMOTIVE MOSFET
GS
GS
@ 10V
@ 10V
G
See Fig.12a, 12b, 15, 16
Typ.
300 (1.6mm from case )
0.50
–––
–––
HEXFET
-55 to + 175
D
S
Max.
180
130
TBD
700
± 20
350
230
1.5
IRF1302
®
R
Power MOSFET
DS(on)
Max.
I
V
0.65
–––
D
62
DSS
TO-220AB
= 180A
= 4.0m
= 20V
PD - 94591
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
1
10/31/02

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IRF1302 Summary of contents

Page 1

... CS R Junction-to-Ambient (PCB mount) JA www.irf.com AUTOMOTIVE MOSFET G @ 10V GS @ 10V GS See Fig.12a, 12b, 15, 16 300 (1.6mm from case ) Typ. ––– 0.50 ––– 94591 IRF1302 ® HEXFET Power MOSFET 20V DSS R = 4.0m DS(on 180A D S TO-220AB Max. Units 180 ...

Page 2

... IRF1302 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... TOP 1000 BOTTOM 4.5V 100 10 1 0.1 10 100 Fig 2. Typical Output Characteristics 2.0 174A 1 175°C 1.0 0.5 0.0 -60 -40 6.0 7.0 Fig 4. Normalized On-Resistance IRF1302 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 20µs PULSE WIDTH Tj = 175° Drain-to-Source Voltage ( 10V GS - 100 120 140 160 180 ° ...

Page 4

... IRF1302 100000 0V, C iss = rss = oss = 10000 Ciss Coss 1000 Crss 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 ° 175 C J 100 10 ° 0.1 0.2 0.7 1.2 V ,Source-to-Drain Voltage (V) SD Fig 7 ...

Page 5

... Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 150 175 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak T 0.001 0. Rectangular Pulse Duration (sec) 1 IRF1302 D.U. µ d(off ...

Page 6

... IRF1302 D.U 20V 0. Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K .2 F 12V .3 F D.U. ...

Page 7

... Figure 15, 16). jmax t Average time in avalanche 125 150 D = Duty cycle in avalanche = Transient thermal resistance, see figure 11) thJC (ave) IRF1302 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25°C due to avalanche losses 1.0E-02 1.0E-01 . This is validated for jmax is jmax · 1/2 ( 1.3· ...

Page 8

... IRF1302 * D.U Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent *** V GS Fig 17. For N-channel 8 Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - - dv/dt controlled controlled by Duty Factor " ...

Page 9

... This is applied G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. Data and specifications subject to change without notice. Qualification Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information.10/02 IRF1302 - B - 1.32 (.052) 1.22 (.048) LEAD ASSIGNMENTS 1 - GATE ...

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