IRF1302 International Rectifier, IRF1302 Datasheet
IRF1302
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IRF1302 Summary of contents
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... CS R Junction-to-Ambient (PCB mount) JA www.irf.com AUTOMOTIVE MOSFET G @ 10V GS @ 10V GS See Fig.12a, 12b, 15, 16 300 (1.6mm from case ) Typ. ––– 0.50 ––– 94591 IRF1302 ® HEXFET Power MOSFET 20V DSS R = 4.0m DS(on 180A D S TO-220AB Max. Units 180 ...
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... IRF1302 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...
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... TOP 1000 BOTTOM 4.5V 100 10 1 0.1 10 100 Fig 2. Typical Output Characteristics 2.0 174A 1 175°C 1.0 0.5 0.0 -60 -40 6.0 7.0 Fig 4. Normalized On-Resistance IRF1302 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 20µs PULSE WIDTH Tj = 175° Drain-to-Source Voltage ( 10V GS - 100 120 140 160 180 ° ...
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... IRF1302 100000 0V, C iss = rss = oss = 10000 Ciss Coss 1000 Crss 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 ° 175 C J 100 10 ° 0.1 0.2 0.7 1.2 V ,Source-to-Drain Voltage (V) SD Fig 7 ...
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... Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 150 175 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak T 0.001 0. Rectangular Pulse Duration (sec) 1 IRF1302 D.U. µ d(off ...
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... IRF1302 D.U 20V 0. Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K .2 F 12V .3 F D.U. ...
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... Figure 15, 16). jmax t Average time in avalanche 125 150 D = Duty cycle in avalanche = Transient thermal resistance, see figure 11) thJC (ave) IRF1302 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25°C due to avalanche losses 1.0E-02 1.0E-01 . This is validated for jmax is jmax · 1/2 ( 1.3· ...
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... IRF1302 * D.U Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent *** V GS Fig 17. For N-channel 8 Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - - dv/dt controlled controlled by Duty Factor " ...
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... This is applied G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. Data and specifications subject to change without notice. Qualification Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information.10/02 IRF1302 - B - 1.32 (.052) 1.22 (.048) LEAD ASSIGNMENTS 1 - GATE ...