IRF1104 International Rectifier, IRF1104 Datasheet - Page 2

• Manufacturer Part Number: IRF1104
• Description: Power MOSFET(Vdss=40V/ Rds(on)=0.009ohm/ Id=100A)
• Manufacturer: International Rectifier

IRF1104
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:
I
I
V
R
V
g
Q
Q
Q
t
t
t
t
L
C
C
C
I
I
V
t
Q
t
L
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
V
fs
D
S
(BR)DSS
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
R
Repetitive rating; pulse width limited by
2
I
(BR)DSS
max. junction temperature. ( See fig. 11 )
Starting T
T
SD
G
J
= 25 , I
175°C
60A, di/dt 304A/µs, V
/ T
J
J
AS
Drain-to-Source Leakage Current
= 25°C, L = 194µH
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
= 60A. (See Figure 12)
Parameter
Parameter
DD
V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
Pulse width
Caculated continuous current based on maximum allowable
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
package refer to Design Tip # 93-4
junction temperature;for recommended current-handling of the
Min. Typ. Max. Units
2.0
Min. Typ. Max. Units
40
–––
–––
37
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
0.038 –––
2900 –––
1100 –––
250
–––
––– 0.009
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
114
–––
–––
–––
188
4.5
15
28
19
7.5
74
–––
–––
250
100
–––
–––
–––
100
–––
–––
–––
–––
110
280
4.0
1.3
300µs; duty cycle
25
93
29
30
400
V/°C
nH
µA
nA
nC
ns
nC
pF
ns
V
V
S
A
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
Reference to 25°C, I
MOSFET symbol
integral reverse
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 60A
= 60A
= 25°C, I
= 25°C, I
= 3.6
= 0.33 , See Fig. 10
= 25V, I
= 32V
= 10V, See Fig. 6 and 13
= 10V, I
= V
= 40V, V
= 32V, V
= 20V
= 25V
= 0V, I
= 20V
= -20V
= 0V
2%.
GS
, I
D
F
S
D
D
D
Conditions
= 60A
= 250µA
= 60A, V
GS
GS
Conditions
= 60A
= 60A
= 250µA
= 0V
= 0V, T
D
www.irf.com
= 1mA
GS
J
= 0V
= 150°C
G
G
S
+L
D
S
D
)
S
D