IRF1010E International Rectifier, IRF1010E Datasheet - Page 2

• Manufacturer Part Number: IRF1010E
• Description: Power MOSFET(Vdss=60V/Rds(on)=12mohm/Id=84A
• Manufacturer: International Rectifier

Source-Drain Ratings and Characteristics
IRF1010E
Electrical Characteristics @ T
Figure 12)
Notes:
V
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
E
L
L
I
I
V
t
Q
t
DSS
GSS
SM
d(on)
r
d(off)
f
S
rr
on
V
2
fs
D
S
(BR)DSS
GS(th)
AS
SD
DS(on)
g
gs
gd
iss
oss
rss
rr
Repetitive rating; pulse width limited by
I
T
(BR)DSS
max. junction temperature. (See fig. 11)
R
SD
Starting T
J
G
= 25 , I
175°C
50A, di/dt
/ T
J
J
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Internal Drain Inductance
Internal Source Inductance
= 25°C, L = 260µH
AS
= 50A, V
230A/µs, V
GS
Parameter
Parameter
=10V (See
DD
V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
Pulse width
This is a typical value at device destruction and represents
Calculated continuous current based on maximum allowable
This is a calculated value limited to T
operation outside rated limits.
–––
–––
–––
–––
–––
–––
–––
––– 1180 320
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
2.0
Min. Typ. Max. Units
60
69
–––
–––
–––
–––
–––
–––
junction temperature. Package limitation current is 75A.
Intrinsic turn-on time is negligible (turn-on is dominated by L
0.064 –––
3210 –––
–––
–––
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
690
140
–––
–––
–––
220
4.5
12
78
48
53
7.5
73
–––
–––
–––
250
100
130
–––
–––
–––
–––
–––
–––
–––
84
110
330
4.0
1.3
400µs; duty cycle
12
25
28
44
330
V/°C
m
µA
nA
ns
nH
mJ
nC
nC
pF
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
I
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
MOSFET symbol
integral reverse
D
D
AS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
J
J
G
= 50A
= 50A
= 25°C, I
= 25°C, I
= 50A, L = 260µH
= 3.6
= 0V, I
= 10V, I
= V
= 25V, I
= 60V, V
= 48V, V
= 20V
= -20V
= 48V
= 10V, See Fig. 6 and 13
= 30V
= 10V, See Fig. 10
= 0V
= 25V
2%.
GS
J
, I
= 175°C .
D
S
F
D
D
D
Conditions
= 250µA
Conditions
GS
GS
= 50A
= 50A, V
= 50A
= 250µA
= 50A
= 0V
= 0V, T
D
www.irf.com
GS
= 1mA
J
= 150°C
= 0V
G
G
S
+L
D
S
D
)
S
D