VS-8EWS16S-M3 Vishay, VS-8EWS16S-M3 Datasheet - Page 3

• Manufacturer Part Number: VS-8EWS16S-M3
• Description: Surface Mountable Input Rectifier Diode, 8 A
• Manufacturer: Vishay

Document Number: 93384
Revision: 04-Apr-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0
0
0
Fig. 3 - Forward Power Loss Characteristics
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
2
180°
120°
30°
90°
60°
30°
Average Forward Current (A)
Average Forward Current (A)
Average Forward Current (A)
2
2
4
RMS limit
60°
30°
4
6
Surface Mountable Input Rectifier Diode, 8 A
8EWS. Series
R
8EWS. Series
R
90°
4
thJC
thJC
[e-mail], [e-mail],
8
60°
For technical questions within your region, please contact one of the following:
(DC) = 2.5 °C/W
(DC) = 2.5 °C/W
120°
6
10
90°
8EWS. Series
T
6
Conduction period
J
Conduction angle
= 150 °C
Conduction angle
180°
12
8
120°
14
Ø
Ø
Ø
8
10
This document is subject to change without notice.
180°
16
DC
18
10
12
VS-8EWS16S-M3 High Voltage Series
Fig. 5 - Maximum Non-Repetitive Surge Current
0.01
Fig. 6 - Maximum Non-Repetitive Surge Current
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1
0
Fig. 4 - Forward Power Loss Characteristics
180°
120°
Number of Equal Amplitude Half
2
DC
90°
60°
30°
Average Forward Current (A)
Cycle Current Pulses (N)
Pulse Train Duration (s)
Maximum non-repetitive surge current
4
At any rated load condition and with
rated V
0.1
Vishay Semiconductors
6
RRM
versus pulse train duration.
10
8
applied following surge.
Rated V
No voltage reapplied
8EWS. Series
T
Conduction period
10
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J
Initial T
Initial T
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
= 150 °C
1
RRM
12
J
J
Ø
RMS limit
= T
= T
reapplied
14
J
J
max.
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max.
100
16
10
3